Intrinsic half-metallicity in two-dimensional Cr 2 TeX 2 (X = I, Br, Cl) monolayers

Jun Zhang,Zixin He,Chuchu Gao,Yanyan Tao,Feng Liang,Guannan Li,Benling Gao,Guang Song

DOI: https://doi.org/10.1039/d3ra05780a

IF: 4.036

2023-01-01

RSC Advances

Abstract:Two-dimensional (2D) materials with intrinsic half-metallicity at or above room temperature are important in spin nanodevices.

chemistry, multidisciplinary

What problem does this paper attempt to address?

Two-dimensional Semimetal States in Transition Metal Trichlorides: A First-Principles Study

Yawei Yu,Xiao Xie,Xiaobiao Liu,Jia Li,Francois M. Peeters,Linyang Li

DOI: https://doi.org/10.1063/5.0105605

IF: 4

2022-01-01

Applied Physics Letters

Abstract:The two-dimensional (2D) transition metal trihalide (TMX3, X = Cl, Br, I) family has attracted considerable attention in recent years due to the realization of CrCl3, CrBr3, and CrI3 monolayers. Up to now, the main focus of the theoretically predicted TMX3 monolayers has been on the Chern insulator states, which can realize the quantum anomalous Hall effect. Here, using first-principles calculations, we theoretically demonstrate that the stable OsCl3 monolayer has a ferromagnetic ground state and a spin-polarized Dirac point without spin–orbit coupling (SOC), which disappears in the band structure of a Janus OsBr1.5Cl1.5 monolayer. We find that OsCl3 exhibits in-plane magnetization when SOC is included. By manipulating the magnetization direction along the C2 symmetry axis of the OsCl3 structure, a gapless half-Dirac semimetal state with SOC can be achieved, which is different from the gapped Chern insulator state. Both semimetal states of OsCl3 monolayer without and with SOC exhibit a linear half-Dirac point (twofold degenerate) with high Fermi velocities. The achievement of the 2D semimetal state with SOC is expected to be found in other TMX3 monolayers, and we confirm it in a TiCl3 monolayer. This provides a different perspective to study the band structure with SOC of the 2D TMX3 family.
The intrinsic ferromagnetic half-metals with high Curie temperature of tetragonal XCrS4 (X=Ti, Zr) monolayer

Hongtong Sun,Chunhao Yin,Zihao Zhao,Jianing Gao,Xing Wang

DOI: https://doi.org/10.1063/5.0214414

IF: 1.697

2024-08-01

AIP Advances

Abstract:Two-dimensional intrinsic magnetic materials with a high Curie temperature (TC) and 100% spin-polarization are highly desirable for creating spintronic devices. In this work, the electronic structure and intrinsic magnetism of XCrS4 (X = Ti, Zr) monolayers are predicted by using first-principles calculations. XCrS4 (X = Ti, Zr) monolayer materials exhibit excellent dynamical, thermal, and dynamically stable stability and small binding energy. The band structures show that XCrS4 (X = Ti, Zr) monolayers are intrinsic ferromagnetic (FM) half-metals with wide half-metallic gaps. Monte Carlo simulations based on the Heisenberg model are used to estimate the Curie temperature (TC) of the TiCrS4 (73 K) and ZrCrS4 (216 K) monolayers. The magnetic performances can be significantly modulated by strain; the TiCrS4 monolayer can undergo FM to antiferromagnetic phase transition under certain uniaxial and biaxial strains. The results indicate that the intrinsic half-metals with higher TC and controllable magnetic properties make XCrS4 (X = Ti, Zr) monolayers enrich the application of nanoscale spintronic devices.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Intrinsic room-temperature ferromagnetism in two-dimensional ternary transition metal tellurides CrX2Te4 (X = Al, Ga, and In)

He Huang,Yanzhe Zhao,Zeyu Zhang,Liming Wang,Yanfei Wu,Chuang Liu,Jiapeng Zhao,Guanxiong Qiao,Jingyan Zhang,Xinqi Zheng,Shiming Zhou,Shouguo Wang

DOI: https://doi.org/10.1063/5.0190288

IF: 6.6351

2024-04-01

APL Materials

Abstract:A tremendous amount of research has witnessed the exploration of two-dimensional (2D) materials with intrinsic ferromagnetism and diverse physical properties. However, the low Curie temperature and deficient magnetic anisotropy hinder their practical applications in nanoscale spintronics. Based on first-principles calculations, we propose a new family of 2D ternary transition metal tellurides, CrX2Te4 (X = Al, Ga, and In), with both structural and magnetic stabilities at room temperature. Our calculations demonstrate that the 2D CrX2Te4 crystal exhibits the intrinsic 100% spin-polarized half-metallic feature with spin-up metallic and spin-down semi-conducting properties. With the remarkable magnetic moment of 4 μB per Cr atom, both 2D CrAl2Te4 and CrGa2Te4 crystals perform robust ferromagnetism with the out-of-plane magnetic anisotropy, while the 2D CrIn2Te4 crystal prefers the in-plane easy magnetization axis. The Monte Carlo simulation based on the 2D Heisenberg model shows that the critical Curie temperatures of the 2D CrAl2Te4, CrGa2Te4, and CrIn2Te4 crystals could reach 466, 431, and 536 K, respectively. Moreover, the magnetic exchange strength and magnetic anisotropy could be further enhanced by the in-plane biaxial strain. The novel electronic and magnetic features promote 2D CrX2Te4 (X = Al, Ga, and In) crystals as a new family of two-dimensional intrinsic ferromagnetic materials for next-generation advanced spintronics.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Two-dimensional half-metallicity in transition metal atoms decorated Cr2Ge2Te6

Wei Kang,Xue Du,Jintian Wang,Ziqin Ye,Jinghong Zhao,Wei Wang,Yan Wang,Lin Wang,Xiaoqing Liu

DOI: https://doi.org/10.3389/fphy.2023.1188513

IF: 3.718

2023-04-07

Frontiers in Physics

Abstract:As one of the first experimentally found and naturally stable two-dimensional (2D) ferromagnetic materials, the monolayer Cr 2 Ge 2 Te 6 has garnered great interest due to its potential hires in electronics and spintronics. Yet, the Curie temperature of monolayer Cr 2 Ge 2 Te 6 is lower than the ambient temperature, severely restricting the creation of valuable devices. Using the first-principle calculations, we explored how the adsorption of 3 d transition metals affects the electronic and magnetic properties of the monolayer Cr 2 Ge 2 Te 6 (from Sc to Zn). Our findings indicate that depending on the 3 d transition metals to be adsorbed, the electronic properties of the Cr 2 Ge 2 Te 6 adsorption system may be adjusted from semiconductor to metal/half-metal. We found that the adsorption of Ti and Fe leads to a transformation from semiconductor to metal. While in Cr 2 Ge 2 Te 6 @Sc, V, Co, Ni, and Cu, the absorption realizes the changes from semiconductor to half metal. Moreover, adsorption may modify the magnetic moment and Curie temperature of the adsorbed system to enhance the ferromagnetic stability of the monolayer Cr 2 Ge 2 Te 6 . Furthermore, we are able to modulate the half-metallic of Cr 2 Ge 2 Te 6 @Mn by means of electric fields. Hence, adsorption is a viable method for modulating the ferromagnetic half-metallic of 2D ferromagnets, paving the door for the future development of nano-electronic and spintronic devices with enhanced performance for 2D ferromagnetic materials.

physics, multidisciplinary
Bipolar Ferromagnetic Semiconductors and Doping-Tuned Room-Temperature Half-Metallicity in Monolayer MoX3 (X =cl, Br, I): an HSE06 Study

Jiayong Zhang,Bao Zhao,Chunlan Ma,Zhongqin Yang

DOI: https://doi.org/10.1103/physrevb.103.075433

IF: 3.7

2021-01-01

Physical Review B

Abstract:Two-dimensional magnetic materials have great potential applications in designing spintronics devices. Here, electronic structures and magnetic properties of monolayer molybdenum trihalides MoX3 (X = Cl, Br, I) are systematically investigated by using first-principles calculations with hybrid functional HSE06. Our calculations show that the magnetic ground state of the monolayer MoI3 is ferromagnetic (FM) with a Curie temperature of 24 K, while the monolayer MoCl3 and MoBr3 are Ned antiferromagnetic. The monolayer MoCl3 and MoBr3 can be tuned into FM phase with a tensile strain. The monolayer MoI3 has a large magnetic anisotropy energy (MAE) of 1.051 meV/Mo with an out-of-plane easy axis. The Curie temperature and MAE of the monolayer MoI3 can be increased by about 50% with a tensile strain of 3%. Remarkably, the monolayer MoI3 and the tensile strained MoCl3 and MoBr3 are found to be bipolar ferromagnetic semiconductors. The Curie temperature of the monolayer MoI3 can be increased up to room temperature by carrier doping. For the monolayer MoBr3, a magnetic phase transition from the antiferromagnetic to FM can be triggered by an electron doping. In addition, the room-temperature half-metallic states can be achieved in the carrier-doped monolayer MoI3 and tensile strained MoBr3. The topological properties for the valence bands of the monolayer MoX3 are also studied. Chern insulating states are obtained in the tensile strained monolayer MoCl3 and MoBr3. Our paper shows that the monolayer MoX3 (X = Cl, Br, I) are promising candidates for exploring two-dimensional magnetism and spintronics in experiments.
Intrinsic two-dimensional multiferroicity in CrNCl2 monolayer

H. Li 李,W. Shen 沈,Y. Pan 潘,Shengnan 胜男 Shen 申,Siyuan 思媛 Nie 聂,Jie 杰 Mei 梅

DOI: https://doi.org/10.1088/1674-1056/ac0787

Abstract:Two-dimensional multiferroics, which simultaneously possess ferroelectricity and magnetism in a single phase, are well-known to possess great potential applications in nanoscale memories and spintronics. On the basis of first-principles calculations, a CrNCl2 monolayer is reported as an intrinsic multiferroic. The CrNCl2 has an antiferromagnetic ground state, with a Néel temperature of about 88 K, and it exhibits an in-plane spontaneous polarization of 200 pC/m. The magnetic moments of CrNCl2 mainly come from the d5 xy orbital of the Cr cation, but the plane of the d xy orbital is perpendicular to the direction of the ferroelectric polarization, which hardly suppresses the occurrence of ferroelectricity. Therefore, the multiferroic exits in the CrNCl2. In addition, like CrNCl2, the CrNBr2 is an intrinsic multiferroic with antiferromagnetic-ferroelectric ground state while CrNI2 is an intrinsic multiferroic with ferromagnetic-ferroelectric ground state. These findings enrich the multiferroics in the two-dimensional system and enable a wide range of applications in nanoscale devices.

Materials Science,Physics
Monolayer MX2 (M = Cr, Mn; X = Se, Te) with a Square Lattice: A Ferromagnetic Half-Metal with High Curie Temperature

Zhicui Wang,Michang Zhang,Yanfeng Ge,Wenhui Wan,Yong Liu

DOI: https://doi.org/10.1016/j.rinp.2023.106687

IF: 4.565

2023-01-01

Results in Physics

Abstract:Ferromagnetic half-metal materials are regarded as important materials for the spintronic devices because of the fully spin-polarized carrier transport. Here, the new two-dimensional (2D) magnetic material MX2 (M = Cr, Mn; X = Se, Te) with the square lattice is designed and studied by first-principle calculations. Molecular dynamics simulation, mechanical parameters, and phonon spectrum are used to confirm structural stability. The study found that MX2 is a ferromagnetic (FM) half-metal material with a large spin and a half-metallic gap. Based on the Heisenberg model, it was discovered that MX2 has Curie temperature well above room temperature, and the fully spin-polarized transport properties in MX2 nano-devices are ensured through the volt-ampere characteristic curves. In addition, the study found that the biaxial tensile strain has significant improvement effects on ferromagnetism. The present work develops FM half-metal materials MX2 with excellent performance, which has enormous application potential in spintronics.
Electric-field induced half-metal in experimentally synthesized CrSBr monolayer

Hao-Tian Guo,San-Dong Guo,Yee Sin Ang

DOI: https://doi.org/10.1039/d3cp04133f

IF: 3.3

2023-10-26

Physical Chemistry Chemical Physics

Abstract:Two-dimensional (2D) half-metallic materials are highly desirable for nanoscale spintronic applications. Here, we propose a new mechanism that can achieve half-metallicity in 2D ferromagnetic (FM) material with two-layer magnetic atoms by electric field tuning. We use a concrete example of experimentally synthesized CrSBr monolayer to illustrate our proposal through the first-principle calculations. It is found that the half-metal can be achieved in CrSBr within appropriate electric field range, and the corresponding amplitude of electric field intensity is available in experiment. Janus monolayer Cr2S2BrI is constructed, which possesses built-in electric field due to broken horizontal mirror symmetry. However, Cr2S2BrI without and with applied external electric field is always a FM semiconductor. A possible memory device is also proposed based on CrSBr monolayer. Our works will stimulate the application of 2D FM CrSBr in future spintronic nanodevices.

chemistry, physical,physics, atomic, molecular & chemical
Room-temperature Ferromagnetism, Half-metallicity and Spin Transport in Monolayer CrSc2Te4-Based Magnetic Tunnel Junction Devices

Ruixue Yue,Xuemin Su,Xiaodong Lv,Bingwen Zhang,Shaolong Su,Haipeng Li,Shaoqiang Guo,Jian Gong

DOI: https://doi.org/10.1039/d4cp01660b

IF: 3.3

2024-06-21

Physical Chemistry Chemical Physics

Abstract:The discovery of novel two-dimensional (2D) half-metallic materials with robust ferromagnetic (FM) order and high Curie temperature (Tc) is attractive for the advancement of next-generation spintronic devices. Here, we proposed a stable 2D intrinsic FM half-metallicity, i.e., CrSc2Te4 monolayer, which was constructed by intercalating a monolayer of 1T-CrTe2-type sandwiched between two layers of 2H-ScTe2 monolayers. Our calculations reveal that it exhibits exceptional dynamical, thermal, and mechanical stability accompanied by a robust half-metallicity characterized by a wide bandgap of 1.02 eV and FM ordering with a high Tc of 326 K. Notably, these properties remain intact in almost the entire range of biaxial strain from -5% to 5%. Furthermore, our investigations demonstrate excellent spin transport capabilities, including an outstanding spin-filtering effect, and a remarkably high tunneling magnetoresistance ratio peaking at 6087.07%. The remarkable magnetic features of 2D CrSc2Te4 monolayer with root temperature FM, intrinsic half-metallicity, and 100% spin-polarization render it a promising candidate for the next-generation high-performance spintronic nanodevices as well as high-density magnetic recording and sensors.

chemistry, physical,physics, atomic, molecular & chemical
Newtype two-dimensional Cr2O3 monolayer with half-metallicity, high curie temperature, and magnetic anisotropy

Wen-Zhi Xiao,Yu-Wen Zhang,Ling-Ling Wang,Chuan-Pin Cheng

DOI: https://doi.org/10.1016/j.jmmm.2021.168657

IF: 3.097

2022-02-01

Journal of Magnetism and Magnetic Materials

Abstract:Due to 100% spin polarization, half-metallic systems play a great role in the development of nanoscale spintronic devices. We conduct extensive calculations within spin-polarized density functional theory to design a newtpye two-dimensional Cr2O3 monolayer. The monolayer demonstrates robust stability as verified by formation energy, phonon spectrum, elastic constants, and molecular dynamics simulation. Each Cr2O3 unit cell gives rise to a total magnetic moment of 6.0 μB, mainly resulting from Cr sites due to the cooperation between crystal-field effect and Hund’s exchange. The monolayer is identified as a half-metallic ferromagnet with Curie temperature up to 460 K and 100% spin polarization. The super-exchange mechanism and direct exchange interaction are responsible for the ferromagnetic coupling. Moreover, the system shows large magnetic anisotropy with the easy axis in the basal plane. The excellent stability, half-metallicity, high Curie temperature, and magnetic anisotropy endow the monolayer with great potential in spintronic devices. This work provides a new pathway for designing ferromagnetic material with half-metallicity and high Curie temperature.

materials science, multidisciplinary,physics, condensed matter
Two-Dimensional Cr2X3S3 (X = Br, I) Janus Semiconductor with Intrinsic Room-Temperature Magnetism

Daoxiong Wu,Zhiwen Zhuo,Haifeng Lv,Xiaojun Wu

DOI: https://doi.org/10.1021/acs.jpclett.1c00454

2021-03-25

Abstract:The exploration of two-dimensional (2D) semiconductors with intrinsic room-temperature magnetism for use in nanoscale spintronic devices is of particular interest. Recently, the ferromagnetic CrX3 monolayer (X = Br, I) has received growing attention, but low critical temperature hinders its practical applications in spintronics. Here, using first-principles calculations, we report 2D Cr2X3S3 (X = Br, I) Janus semiconductors with room-temperature magnetism by replacing one layer of halogon atoms with sulfur atoms in CrX3 monolayer. Our results demonstrate that Cr2Br3S3 and Cr2I3S3 Janus crystals are ferrimagnetic semiconductors, that maintain their magnetic order, with a direct bandgap of 1.19 and 0.61 eV and high critical temperature of 387 and 447 K, respectively. The residual unpaired p electrons on the S anions lead to a strong direct-exchange interaction between the Cr and S atoms. Moreover, their room-temperature magnetism is robust under biaxial strain, while the bandgap can be remarkably modulated with strain. The novel magnetic properties in 2D Cr2X3S3 Janus magnetic semiconductors give them promising applications in spintronics.
Two-dimensional Ferromagnetic van der Waals CrX3 (X=Cl, Br, I) Monolayers with Enhanced Anisotropy and Curie Temperature

Feng Xue,Yusheng Hou,Zhe Wang,Ruqian Wu

DOI: https://doi.org/10.1103/PhysRevB.100.224429

2019-09-07

Abstract:Among the recently widely studied van der Waals layered magnets CrX3 (X=Cl, Br, I), CrCl3 monolayer (ML) is particularly puzzling as it is solely shown by experiments to have an in-plane magnetic easy axis and, furthermore, all of previous first-principles calculation results contradict this. Through systematical first-principles calculations,we unveil that its in-plane shape anisotropy that dominates over its weak perpendicular magnetocrystalline anisotropy is responsible for the in-plane magnetic easy axis of CrCl3 ML. To tune the in-plane ferromagnetism of CrCl3 ML into the desirable perpendicular one, we propose substituting Cr with isovalent tungsten (W). We find that CrWCl6 has a strong perpendicular magnetic anisotropy and a high Curie temperature up to 76 K. Our work not only gives insight into understanding the two-dimensional ferromagnetism of van der Waals MLs but also sheds new light on engineering their performances for nanodevices.

Materials Science
Two-Dimensional Janus FeXY (X, Y = Cl, Br, and I, X ≠ Y) Monolayers: Half-Metallic Ferromagnets with Tunable Magnetic Properties under Strain

Rui Li,Jiawei Jiang,Xiaohui Shi,Wenbo Mi,Haili Bai

DOI: https://doi.org/10.1021/acsami.1c10304

2021-08-09

Abstract:Two-dimensional (2D) ferromagnetic materials with high spin polarization are highly desirable for spintronic devices. 2D Janus materials exhibit novel properties due to their broken symmetry. However, the electronic structure and magnetic properties of 2D Janus magnetic materials with high spin polarization are still unclear. Inspired by the successful synthesis of a ferromagnetic FeCl2 monolayer and 2D Janus MoSSe and WSSe, we systematically study the electronic structure and magnetic properties of Janus FeXY (X, Y = Cl, Br, and I, X ≠ Y) monolayers. Based on the Goodenough–Kanamori–Anderson theory, the ferromagnetism stems from the superexchange interaction mediated by Fe–X/Y–Fe bonds. The band gaps of spin-up channels are large enough (>4 eV) to prevent spin flipping, which is beneficial for spintronic devices. Additionally, the sizable magnetocrystalline anisotropy energy (MAE) indicates that Janus FeXY monolayers are suitable for information storage. More importantly, the half-metallic character is still kept in Janus FeXY monolayers, and their magnetic properties are enhanced by the biaxial compressive strain. The MAE of FeClI and FeBrI increases by 1 order of magnitude, and the Curie temperature of FeXY monolayers enhances by 100%. These results provide an example of the 2D Janus half-metallic materials and enrich the 2D magnetic material library.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsami.1c10304.Investigation of Coulomb interaction of bulk FeCl2 and TC under different strains; planar average electrostatic potential energy, phonon dispersion, AIMD simulation, and partial density of states of FeXY monolayers; band structures, magnetic moments, and −ICOHP of FeXY monolayers under different strains; and the total, atom-layer, and orbital-resolved MAE of the unstrained and strained FeClI monolayer (PDF)This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology
Electric-field induced half-metal in monolayer CrSBr

Hao-Tian Guo,San-Dong Guo,Yee Sin Ang

2023-08-07

Abstract:Two-dimensional (2D) half-metallic materials are highly desirable for nanoscale spintronic applications. Here, we propose a new mechanism that can achieve half-metallicity in 2D ferromagnetic (FM) material with two-layer magnetic atoms by electric field tuning. We use a concrete example of experimentally synthesized CrSBr monolayer to illustrate our proposal through the first-principle calculations. It is found that the half-metal can be achieved in CrSBr within appropriate electric field range, and the corresponding amplitude of electric field intensity is available in experiment. Janus monolayer $\mathrm{Cr_2S_2BrI}$ is constructed, which possesses built-in electric field due to broken horizontal mirror symmetry. However, $\mathrm{Cr_2S_2BrI}$ without and with applied external electric field is always a FM semiconductor. A possible memory device is also proposed based on CrSBr monolayer. Our works will stimulate the application of 2D FM CrSBr in future spintronic nanodevices.

Materials Science
Cr 2 NX 2 MXene (X = O, F, OH): A 2D ferromagnetic half-metal

Qian Sun,Jie Li,Yi Li,Zongxian Yang,Ruqian Wu

DOI: https://doi.org/10.1063/5.0056084

IF: 4

2021-08-09

Applied Physics Letters

Abstract:Using the spin-polarized first-principles calculations, we revealed that two-dimensional transition metal nitride MXenes Cr2NX2 (X = O, F, OH) are excellent two-dimensional half-metallic ferromagnetic materials. Their structures and ferromagnetic ground states are stable well above room temperature. In addition, their large half-metal bandgaps are enough to prevent spin reversal and ensure high spin filtering efficiency and large spin mean free paths. The half-metallic property of these functionalized Cr2NX2 systems is robust and can be maintained under tensile strains up to 10%. These predictions suggest that the functionalized Cr2NX2 is of great significance for the development of highly efficient spintronic devices for room temperature applications.

physics, applied
Strain Tunable Intrinsic Ferromagnetic in 2D Square CrBr$_2$

Fei Li,Yulu Ren,Wenhui Wan,Yong Liu,Yanfeng Ge

DOI: https://doi.org/10.1063/5.0073663

IF: 1.697

2021-01-01

AIP Advances

Abstract:Two-dimensional intrinsic magnetic materials with high Curie temperature (Tc) coexisting with 100% spin polarization are highly desirable for realizing promising spintronic devices. In the present work, the intrinsic magnetism of monolayer square CrBr2 is predicted by using first-principles calculations. The monolayer CrBr2 is an intrinsic ferromagnetic half-metal with the half-metallic gap of 1.58 eV. Monte Carlo simulations based on the Heisenberg model estimate Tc as 212 K. Furthermore, the large compressive strain makes CrBr2 undergo ferromagnetic–antiferromagnetic phase transition when the biaxial tensile strain larger than 9.3% leads to the emergence of semiconducting electronic structures. Our results show that the intrinsic half-metal with a high Tc and controllable magnetic properties endow monolayer square CrBr2 as a potential material for spintronic applications.
Intrinsic Magnetism and Biaxial Strain Tuning in Two-Dimensional Metal Halides V3X8 (X = F, Cl, Br, I) from First Principles and Monte Carlo Simulation

Haibo Xiao,Xiaonan Wang,Ruilong Wang,Lingfang Xu,Shiheng Liang,Changping Yang

DOI: https://doi.org/10.1039/c9cp00850k

2019-01-01

Abstract:A novel family of two-dimensional (2D) crystalline metal superhalogens V3X8 (X = F, Cl, Br, I) with intrinsic magnetism was predicted using first-principles calculations in the framework of density functional theory (DFT). The calculation results show that the V3Cl8 monolayer is an intrinsic anti-ferromagnetic semiconductor (AFS) with an indirect bandgap of 0.086 eV at the PBE functional level, while the V3X8 (X = F, Br, I) monolayer exhibits a fascinating ferromagnetic half-metal (FH) property with 100% spin-polarization at the Fermi level. Such 2D materials possess robust dynamical stability as well as thermal stability at room temperature except for V3Br8. In addition, Monte Carlo simulations based on the Ising model with the classical Heisenberg model estimate a Curie temperature of approximately 77 K and 103 K for the V3F8 and V3I8 systems, respectively. Furthermore, we predict an extraordinary phenomenon induced by biaxial compressive strain from the ferromagnetic half-metal (FH) to the ferromagnetic semiconductor (FS) at 2% strain and then to the antiferromagnetic metal (AM) with the biaxial strain increasing up to about 6.3% in the 2D V3I8 monolayer. In the case of 2D V3F8, as the strain varies from -10% to 8%, a series of electronic and magnetic phase transitions of AFS-AM-FH-AFS will occur. These tunable magnetic and electronic properties of 2D halides originate from the competition between AFM direct nearest-neighbor d-d exchange and FM superexchange via halogen p states, which leads to a variety of magnetic states. The explored controllable magnetic properties, electronic properties and the high Curie temperature render the 2D V3I8 monolayer a promising candidate for applications in magnetic logic devices and strain sensor devices.
Fragile Symmetry-Protected Half Metallicity in Two-Dimensional van der Waals Magnets: A Case Study of Monolayer FeCl2

Qiushi Yao,Jiayu Li,Qihang Liu

DOI: https://doi.org/10.1103/PhysRevB.104.035108

2021-04-28

Abstract:Two-dimensional (2D) half-metallic materials are of great interest for their promising applications in spintronics. Although numerous of 2D half-metals have been proposed theoretically, rarely of them can be synthesized experimentally. Here, exemplified by monolayer FeCl2, we show three mechanisms in such quantum magnets that would cause the metal-insulator transition by using first-principles calculations. In particular, half-metallicity, especially that protected by symmetry-induced degeneracies, predicted by the previous theoretical simulations could be destroyed by electron correlation, spin-orbit coupling and further structural distortions to lower the total energy. Our work reveals the fragility of the symmetry-protected half-metals upon various competing energy-lowering mechanisms, which should be taken into account for theoretically predicting and designing quantum mateirals with exotic functionalities.

Materials Science
Cr2XTe4 (X = Si, Ge) Monolayers: a New Type of Two-Dimensional High-T C Ising Ferromagnetic Semiconductors with a Large Magnetic Anisotropy

Yihang Bai,Rui Shi,Yaxuan Wu,Bing Wang,Xiuyun Zhang

DOI: https://doi.org/10.1088/1361-648x/ac7f16

2022-01-01

Journal of Physics Condensed Matter

Abstract:Two-dimensional (2D) ferromagnetic semiconductor (FMS) provides the ideal platform for the development of quantum information technology in nanoscale devices. However, most of them suffer from low Curie temperature and small magnetic anisotropic energy (MAE), severely limiting their practical application. In this work, by using first-principles calculations, we predicted two stable 2D materials, namely, Cr2SiTe4and Cr2GeTe4monolayers. Interestingly, both of them are intrinsic direct band gap FMSs (∼1 eV) with a large magnetization (8µBf.u.-1) and sizable MAE (∼500μeV Cr-1). Monte Carlo simulations based on Heisenberg model suggest markedly high Curie temperatures of these monolayers (∼200 K). Besides, their high mechanical, dynamical, and thermal stabilities are further verified by elastic constants, phonon dispersion calculations, andab initiomolecular dynamics simulations. The outstanding attributes render Cr2XTe4(X = Si, Ge) monolayers broadening the candidates of 2D FMS for a wide range of applications.
Doping Enhanced Ferromagnetism and Induced Half-Metallicity in CrI 3 Monolayer

Hongbo Wang,Fengren Fan,Shasha Zhu,Hua Wu

DOI: https://doi.org/10.1209/0295-5075/114/47001

2016-01-01

Europhysics Letters

Abstract:Two-dimensional materials are of current great interest for their promising applications to postsilicon microelectronics. Here we study, using first-principles calculations and a Monte Carlo simulation, the electronic structure and magnetism of CrI3 monolayer, whose bulk material is an interesting layered ferromagnetic (FM) semiconductor. Our results show that CrI3 monolayer remains FM with T-C similar to 75K, and the FM order is due to a superexchange in the near-90 degrees Cr-I-Cr bonds. Moreover, we find that an itinerant magnetism could be introduced by carriers doping. Both electron doping and hole doping would render CrI3 monolayer half-metallic, and steadily enhance the FM stability. In particular, hole doping is three times as fast as electron doping in increasing T-C, and a room temperature FM half-metallicity could be achieved in CrI3 monolayer via a half-hole doping. Therefore, CrI3 monolayer would be an appealing two-dimensional spintronic material. Copyright (C) EPLA, 2016

Intrinsic half-metallicity in two-dimensional Cr 2 TeX 2 (X = I, Br, Cl) monolayers

Two-dimensional Semimetal States in Transition Metal Trichlorides: A First-Principles Study

The intrinsic ferromagnetic half-metals with high Curie temperature of tetragonal XCrS4 (X=Ti, Zr) monolayer

Intrinsic room-temperature ferromagnetism in two-dimensional ternary transition metal tellurides CrX2Te4 (X = Al, Ga, and In)

Two-dimensional half-metallicity in transition metal atoms decorated Cr2Ge2Te6

Bipolar Ferromagnetic Semiconductors and Doping-Tuned Room-Temperature Half-Metallicity in Monolayer MoX3 (X =cl, Br, I): an HSE06 Study

Intrinsic two-dimensional multiferroicity in CrNCl2 monolayer

Monolayer MX2 (M = Cr, Mn; X = Se, Te) with a Square Lattice: A Ferromagnetic Half-Metal with High Curie Temperature

Electric-field induced half-metal in experimentally synthesized CrSBr monolayer

Room-temperature Ferromagnetism, Half-metallicity and Spin Transport in Monolayer CrSc2Te4-Based Magnetic Tunnel Junction Devices

Newtype two-dimensional Cr2O3 monolayer with half-metallicity, high curie temperature, and magnetic anisotropy

Two-Dimensional Cr2X3S3 (X = Br, I) Janus Semiconductor with Intrinsic Room-Temperature Magnetism

Two-dimensional Ferromagnetic van der Waals CrX3 (X=Cl, Br, I) Monolayers with Enhanced Anisotropy and Curie Temperature

Two-Dimensional Janus FeXY (X, Y = Cl, Br, and I, X ≠ Y) Monolayers: Half-Metallic Ferromagnets with Tunable Magnetic Properties under Strain

Electric-field induced half-metal in monolayer CrSBr

Cr 2 NX 2 MXene (X = O, F, OH): A 2D ferromagnetic half-metal

Strain Tunable Intrinsic Ferromagnetic in 2D Square CrBr$_2$

Intrinsic Magnetism and Biaxial Strain Tuning in Two-Dimensional Metal Halides V3X8 (X = F, Cl, Br, I) from First Principles and Monte Carlo Simulation

Fragile Symmetry-Protected Half Metallicity in Two-Dimensional van der Waals Magnets: A Case Study of Monolayer FeCl2

Cr2XTe4 (X = Si, Ge) Monolayers: a New Type of Two-Dimensional High-T C Ising Ferromagnetic Semiconductors with a Large Magnetic Anisotropy

Doping Enhanced Ferromagnetism and Induced Half-Metallicity in CrI 3 Monolayer