Abstract:In this work, we focus on the structural and electronic properties of lanthanum mono-nitrides under high pressure. Based on first-principles calculations and crystal structure predictions, we identified an anti-ferroelectric orthogonal phase with space group Pbcm. It is predicted to be thermodynamically stable from 20 to 60 GPa, above which the tetragonal phase without the anti-ferroelectric distortion will substitute it. However, the anti-ferroelectric distortion can be enhanced by reducing the pressure, and a phase transition to a NiAs-type (B8, P6(3)/mmc) structure occurs at about 20 GPa. The calculated double-well potential for La atoms along the c direction in the B8 phase reveals that it should exhibit ferroelectric properties at low temperatures. Enthalpy calculations well confirm their phase transition sequences under high pressure. Electronic properties calculations suggest that all the newly identified phases are semiconductors and the corresponding structural distortions can increase their bandgaps. When increasing the pressure to 50 GPa, the tetragonal phase undergoes a semiconductor-to-semimetal transition. Taking the spin-orbit coupling into account, the semimetal phase becomes a topological insulator with a small bandgap. Finally, given the similarities between the ionic compounds LaN and BaO, we predict that the most stable phase for BaO at about 25 GPa should also be the anti-ferroelectric orthogonal phase instead of the tetragonal phase.

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