Abstract:Vanadium dioxide (VO2) is a strongly correlated electronic material and has attracted significant attention due to its metal-to-insulator transition and diverse smart applications. Traditional synthesis of VO2 usually requires minutes or hours of global heating and low oxygen partial pressure to achieve thermodynamic control of the valence state. Further patterning of VO2 through a series of lithography and etching processes may inevitably change its surface valence, which poses a great challenge for the assembly of micro- and nanoscale VO2-based heterojunction devices. Herein, we report an ultrafast method to simultaneously synthesize and pattern VO2 on the time scale of seconds under ambient conditions through laser direct writing on a V5S8 "canvas". The successful ambient synthesis of VO2 is attributed to the ultrafast local heating and cooling process, resulting in controlled freezing of the intermediate oxidation phase during the relatively long kinetic reaction. A Mott memristor based on a V5S8–VO2–V5S8 lateral heterostructure can be fabricated and integrated with a MoS2 channel, delivering a transistor with abrupt switching transfer characteristics. The other device with a VSxOy channel exhibits a large negative temperature coefficient of approximately 4.5%/K, which is highly desirable for microbolometers. The proposed approach enables fast and efficient integration of VO2-based heterojunction devices and is applicable to other intriguing intermediate phases of oxides.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsnano.1c03050?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsnano.1c03050</a>.Optical image of V5S8 flakes on SiO2/Si; electrical properties of V5S8 flakes; optical image of a VO2 pattern; Raman spectra of VO2 transformed from different thicknesses of V5S8; XPS spectra of S 2p peaks of V5S8 flakes; HRTEM images and corresponding FFT patterns of VO2; comparison of synthesis conditions and properties of VO2 between our work and traditional methods; I–V curves of a Mott memristor with different sweep speeds; long cycling of a Mott memristor; Raman spectra of the oxidation products; Raman spectra of V5S8 and intermediate state on Al2O3; AES spectra of V5S8, intermediate state and VO2; Raman spectrum of mixed phases of VO2, V3O7, and V2O5; laser direct writing on a stacked V5S8 sample; finite-element simulation and reaction kinetics analysis; phonon softening of V5S8 under laser irradiation; temperature-dependent Raman spectra of V5S8; influence of substrates on the oxidation products; electrical properties of VO2; Ids–Vgs curve of a MoS2 transistor; influence of the laser scanning rate on the NTCR device (<a class="ext-link" href="/doi/suppl/10.1021/acsnano.1c03050/suppl_file/nn1c03050_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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