Polymer/molecular semiconductor all-organic composites for high-temperature dielectric energy storage

Chao Yuan,Yao Zhou,Yujie Zhu,Jiajie Liang,Shaojie Wang,Simin Peng,Yushu Li,Sang Cheng,Mingcong Yang,Jun Hu,Bo Zhang,Rong Zeng,Jinliang He,Qi Li
DOI: https://doi.org/10.1038/s41467-020-17760-x
IF: 16.6
2020-08-06
Nature Communications
Abstract:Abstract Dielectric polymers for electrostatic energy storage suffer from low energy density and poor efficiency at elevated temperatures, which constrains their use in the harsh-environment electronic devices, circuits, and systems. Although incorporating insulating, inorganic nanostructures into dielectric polymers promotes the temperature capability, scalable fabrication of high-quality nanocomposite films remains a formidable challenge. Here, we report an all-organic composite comprising dielectric polymers blended with high-electron-affinity molecular semiconductors that exhibits concurrent high energy density (3.0 J cm −3 ) and high discharge efficiency (90%) up to 200 °C, far outperforming the existing dielectric polymers and polymer nanocomposites. We demonstrate that molecular semiconductors immobilize free electrons via strong electrostatic attraction and impede electric charge injection and transport in dielectric polymers, which leads to the substantial performance improvements. The all-organic composites can be fabricated into large-area and high-quality films with uniform dielectric and capacitive performance, which is crucially important for their successful commercialization and practical application in high-temperature electronics and energy storage devices.
multidisciplinary sciences
What problem does this paper attempt to address?
The problem that this paper attempts to solve is: **the low energy density and low efficiency of dielectric polymers in electrostatic energy storage in high - temperature environments**. Specifically, in high - temperature environments, due to thermally - assisted charge injection, excitation and transport, the leakage current of dielectric polymers increases exponentially, which causes the discharge energy density ($U_e$) and the discharge efficiency ($\eta$, defined as the ratio of the discharge energy density to the stored energy density) to decrease significantly. Therefore, at temperatures above 150 °C, even with multiple synthesis and modification methods, existing dielectric polymers can hardly achieve an energy density higher than 2.0 J/cm³, and are usually accompanied by low efficiency, which will lead to a large amount of waste heat (Joule heat) and may even cause thermal runaway of the device. In addition, although the introduction of insulating inorganic nanostructures (such as boron nitride nanosheets) can improve the capacitive performance at high temperatures, as the temperature further rises, the energy density and efficiency of these nanocomposites will also drop sharply. In particular, at 200 °C, the maximum energy density of these materials is only between 0.5 and 1.3 J/cm³, far lower than the energy density (about 4.0 J/cm³) of biaxially - oriented polypropylene (BOPP), a commercial benchmark capacitor material at room temperature. Moreover, manufacturing large - area, uniform, high - quality nanocomposite films remains a huge challenge. To solve these problems, this research proposes a brand - new all - organic composite material, which is a mixture of dielectric polymers and molecular semiconductors with high electron affinity. This composite material can simultaneously achieve a high energy density (3.0 J/cm³) and a high discharge efficiency (90%) at temperatures up to 200 °C, far exceeding the performance of existing dielectric polymers and polymer nanocomposites. Through strong electrostatic attraction, molecular semiconductors can capture free electrons and suppress charge injection and transport, thereby significantly improving performance. In addition, this all - organic composite material can be prepared into large - area, high - quality films, which is crucial for its successful commercialization and application in high - temperature electronics and energy - storage devices.