Sparsity-Aware In-Memory Neuromorphic Computing Unit With Configurable Topology of Hybrid Spiking and Artificial Neural Network
Ying Liu,Zhiyuan Chen,Wentao Zhao,Tianhao Zhao,Tianyu Jia,Zhixuan Wang,Ru Huang,Le Ye,Yufei Ma
DOI: https://doi.org/10.1109/tcsi.2024.3377700
2024-01-01
Abstract:Spiking neural networks (SNNs) have shown great potential in achieving high energy efficiency and low power consumption compared to artificial neural networks (ANNs). However, there remains a significant accuracy gap between SNNs and ANNs. To address this issue, we present an in-memory neuromorphic computing (IMNC) chip that supports hybrid spiking/artificial neural networks (S/ANNs) and sparsity-aware data flows. With the IMNC chip, we aim to improve inference accuracy while simultaneously achieving high energy efficiency through optimization at the algorithm, architecture, and circuit levels. First, at the algorithm level, we note that SNNs extract temporal features from input spikes using time-domain convolution operations. Based on this insight, we efficiently utilize leaky integrate (LI) neurons to hybridize SNNs and ANNs, thereby improving accuracy while maintaining highly sparse operations. Second, at the architecture level, we design a sparsity-aware architecture that supports a hybrid S/ANN topology with varying sparsity. Finally, at the circuit level, we propose a ring-based in-memory computing (IMC) macro, whose energy consumption is inversely proportional to the input sparsity, making it ideal for performing energy-efficient multiplication and accumulation (MAC) operations in both SNNs and ANNs. We evaluate the proposed hybrid S/ANNs on various classification tasks and demonstrate their stronger classification and generalization ability compared with pure SNNs. Notably, our IMNC chip, fabricated using 22 nm CMOS technology, achieves impressive measured accuracy rates of over 95% for voice activity detection (VAD) and ECG anomaly detection. Additionally, our IMNC chip demonstrates superior dynamic energy efficiency of 0.43 pJ per synaptic operation, outperforming related works.
engineering, electrical & electronic