Establishing a Relationship between the Bandgap and the Structure in 2D Lead Halide Perovskite Semiconductors

Hui-Yuan Zu,Chang-Chun Fan,Cheng-Dong Liu,Chang-Qing Jing,Chao-Yang Chai,Bei-Dou Liang,Xiang-Bin Han,Wen Zhang
DOI: https://doi.org/10.1021/acs.chemmater.3c00596
IF: 10.508
2023-07-20
Chemistry of Materials
Abstract:Hybrid lead halide perovskites have been intensively investigated due to their structural diversity and outstanding optoelectronic properties. As emerging semiconducting materials, their bandgaps play a key role in regulating the performance. Qualitative correlations between the bandgap and structure have been uncovered; however, quantified relationships have not yet been established. Herein, we report a series of hydrogen-bonded quasi-Dion–Jacobson (DJ) perovskite semiconductors, [(HOOC n H2n–2NH3)2]­PbBr4 (n = 3–8), as a model system to set up a more clear relationship between the structural distortions and optoelectronic properties. When the n ranges from 4 to 8, the serial compounds are featured by distinctive hydrogen-bonded diammonium layers containing dimerized COOH linkers and balanced photoluminescent and photodetection properties. A linear relationship between the bandgap (E g) and two structural parameters (D int and D d) is set up, that is, E g = 2.694 + 0.004680D int + 0.3109D d, indicating the roles of both the interlayer distance and inorganic framework distortion. This work not only expands the typical DJ-type perovskites but also provides a deepened understanding of the relationship between the structures and optoelectronic properties.
materials science, multidisciplinary,chemistry, physical
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