Abstract:The formation of moiré patterns in crystalline solids can be used to manipulate their electronic properties, which are fundamentally influenced by periodic potential landscapes. In two-dimensional materials, a moiré pattern with a superlattice potential can be formed by vertically stacking two layered materials with a twist and/or a difference in lattice constant. This approach has led to electronic phenomena including the fractal quantum Hall effect1–3, tunable Mott insulators4,5 and unconventional superconductivity6. In addition, theory predicts that notable effects on optical excitations could result from a moiré potential in two-dimensional valley semiconductors7–9, but these signatures have not been detected experimentally. Here we report experimental evidence of interlayer valley excitons trapped in a moiré potential in molybdenum diselenide (MoSe2)/tungsten diselenide (WSe2) heterobilayers. At low temperatures, we observe photoluminescence close to the free interlayer exciton energy but with linewidths over one hundred times narrower (around 100 microelectronvolts). The emitter g-factors are homogeneous across the same sample and take only two values, −15.9 and 6.7, in samples with approximate twist angles of 60 degrees and 0 degrees, respectively. The g-factors match those of the free interlayer exciton, which is determined by one of two possible valley-pairing configurations. At twist angles of approximately 20 degrees the emitters become two orders of magnitude dimmer; however, they possess the same g-factor as the heterobilayer at a twist angle of approximately 60 degrees. This is consistent with the umklapp recombination of interlayer excitons near the commensurate 21.8-degree twist angle7. The emitters exhibit strong circular polarization of the same helicity for a given twist angle, which suggests that the trapping potential retains three-fold rotational symmetry. Together with a characteristic dependence on power and excitation energy, these results suggest that the origin of the observed effects is interlayer excitons trapped in a smooth moiré potential with inherited valley-contrasting physics. This work presents opportunities to control two-dimensional moiré optics through variation of the twist angle.

Excitonic and valleytronic signatures of correlated states at fractional fillings of a moiré superlattice

Correlated insulating states at fractional fillings of the WS2/WSe2 moiré lattice

Mott and generalized Wigner crystal states in WSe2/WS2 moiré superlattices

Valley-polarized Exitonic Mott Insulator in WS2/WSe2 Moiré Superlattice

Intralayer charge-transfer moiré excitons in van der Waals superlattices

Valley-polarized exitonic Mott insulator in WS 2 /WSe 2 moiré superlattice

Quadrupolar excitons and hybridized interlayer Mott insulator in a trilayer moiré superlattice

Fractionalized Topological States in Moiré Superlattices

Imaging local discharge cascades for correlated electrons in WS2/WSe2 moiré superlattices

Tunable spin and valley excitations of correlated insulators in $Γ$-valley moiré bands

Tunable exciton valley-pseudospin orders in moiré superlattices

Time-Domain Signatures of Distinct Correlated Insulators in a Moiré Superlattice

Correlated insulator of excitons in WSe2/WS2 moiré superlattices

Crystal-field effects in the formation of Wigner-molecule supercrystals in moiré TMD superlattices

Excitonic density wave and spin-valley superfluid in bilayer transition metal dichalcogenide

Signatures of moiré-trapped valley excitons in MoSe2/WSe2 heterobilayers

Spectral Evidence of Wigner Crystallisation over a One-Dimensional Moiré Superlattice under Magnetic Fields

Strong interaction between interlayer excitons and correlated electrons in WSe2/WS2 moiré superlattice

Exciton Superposition across Moiré States in a Semiconducting Moiré Superlattice

Quantum anomalous Hall crystal at fractional filling of moiré superlattices