Growth and research on photoluminescence and radiation-induced luminescence properties of Dy-doped YVO 4 single crystals

Kensei Ichiba,Takumi Kato,Kenichi Watanabe,Daisuke Nakauchi,Noriaki Kawaguchi,Takayuki Yanagida
DOI: https://doi.org/10.1016/j.optmat.2024.114982
IF: 3.754
2024-02-02
Optical Materials
Abstract:0.05, 0.1, 0.5, and 1.0 % Dy-doped YVO 4 single crystals were prepared by the optical floating zone technique to obtain photoluminescence (PL) and scintillation properties. All the samples showed the emission owing to charge transfer from V 5+ ions to O 2− ions inside [VO 4 ] 3- and the 4f–4f transitions of Dy 3+ ions. Light yields exhibited 37,000 (0.05 % Dy), 42,000 (0.1 % Dy), 44,000 (0.5 % Dy), and 39,000 photons/MeV (1.0 % Dy), based on the pulse height spectra. In afterglow properties, afterglow levels were 37.7 (0.05 % Dy), 25.7 (0.1 % Dy), 23.2 (0.5 % Dy), and 20.6 (1.0 % Dy) ppm.
materials science, multidisciplinary,optics
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