Point defect engineering of elemental phosphorus for photocatalytic hydrogen evolution

Yajie Sun,Xinya Pei,Bo Wang,Yun Hau Ng,Ruixue Zhu,Qichao Zhang,Jiguang Deng,Yuxi Liu,Lin Jing,Hongxing Dai
DOI: https://doi.org/10.1016/j.cej.2023.142488
IF: 15.1
2023-03-23
Chemical Engineering Journal
Abstract:Red phosphorus (RP) has been demonstrated for photocatalytic hydrogen evolution (PHE) in recent years. Realistically, P vacancy (V P ) defects are present in RP. The constructive or detrimental influences of such defects on the photocatalytic activity of RP should be revealed as the understanding shall provide a platform for further improvement. Herein, we for the first time establish a comprehensive understanding of the crucial relationships between the intrinsic V P defects and the charge dynamics together with the photocatalytic performance in RP. Two main findings are achieved: i) V P -induced deep charge trapping effect is revealed to lead to a severe loss of active electrons during the H + reduction reaction, resulting in the inferior PHE performance of RP. ii) O doping in the V P sites is demonstrated to be an effective strategy for eliminating the detrimental V P defect states, leading to a long-lived free electron lifetime in RP for enhanced PHE performance. The point defect engineering of RP applied in this study paves a promising way in tuning the physicochemical properties of RP and other elemental-based materials for various applications.
engineering, chemical, environmental
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