Flat‐Zigzag Interface Design of Chalcogenide Heterostructure towards Ultra‐Low Volume Expansion for High‐Performance Potassium Storage

Qingguang Pan,Zhaopeng Tong,Yuanqiang Su,Yongping Zheng,Lin Shang,Yongbing Tang

DOI: https://doi.org/10.1002/adma.202203485

IF: 29.4

2022-08-15

Advanced Materials

Abstract:Heterostructure construction of layered metal chalcogenides can boost their alkali‐metal storage performance, where the charge transfer kinetics could be promoted by the built‐in electric fields. However, these heterostructures usually undergo interface separation due to severe layer expansion, especially for large‐size potassium accommodation, resulting in the deconstruction of heterostructures and battery performance fading. Herein, we firstly present a stable interface design strategy that two metal chalcogenides with totally different layer‐morphologies are stacked to form large K+ transport channels, rendering ultra‐low interlayer expansion. As a proof of concept, the flat‐zigzag MoS2/Bi2S3 heterostructures stacked with zigzag‐morphology Bi2S3 and flat‐morphology MoS2 present an ultra‐low expansion ratio (1.98%) versus MoS2 (9.66%) and Bi2S3 (9.61%), which deliver an ultrahigh potassium storage capacity of above 600 mAh/g and capacity retention of 76% after 500 cycles, together with the built‐in electric field of heterostructures. Once the heterostructures are used as an anode for potassium‐based dual‐ion batteries (K‐DIBs), it achieves a superior full‐cell capacity of ∼166 mAh/g (based on anodes) with a capacity retention of 71% after 400 cycles, which is an outstanding performance among the reported K‐DIBs. This proposed interface stacking strategy may offer a new way toward stable heterostructure design for metal ions storage and transport applications. This article is protected by copyright. All rights reserved

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology