Improved photocatalytic performance of Z-scheme heterostructured SnS2/Sg-C3N4 composite: A new route to increasing specific surface area

Dafeng Gao,Dayi Jiao,Fuming Chen,Yuheng Liang,Yinzhen Wang,Guannan He,Wei Li,Qinyu He
DOI: https://doi.org/10.1016/j.vacuum.2022.111785
IF: 4
2023-04-01
Vacuum
Abstract:In this study, SnS2/S-doped g-C3N4 (Sg-C3N4) composite with SnS2 and Sg-C3N4 in the weight ratio of 9:1 was prepared by a hydrothermal method. For comparison, composites of SnS2/Sg-C3N4 with weight ratios of 9:0.05 and 9:1.5, pure SnS2, Sg-C3N4, and g-C3N4 were also prepared using the same processing parameters. Microstructural characterization showed that nano-sized SnS2 particles were deposited on Sg-C3N4 to form a Z-scheme photocatalyst. The chemical valence of the doped S in Sg-C3N4 was +6, allowing the surface of Sg-C3N4 in the composite to be considerably uneven for the deposition of SnS2. The uneven surface of Sg-C3N4 resulted in a rough surface of the SnS2/Sg-C3N4 composite, which significantly enhanced the specific surface area and light absorption over a wide wavelength range of 200–1000 nm. The carrier transfer capability and lifetime of g-C3N4 were improved after S doping. The lifetime and transfer ability of the photoproduced carriers in the composite were improved by the Z-scheme heterojunction. Consequently, the rate constant of the composite is thrice that of pure SnS2 and 57 times that of Sg-C3N4. This work demonstrates a novel route to enhance light absorption over a wide wavelength range: depositing a semiconductor on a base semiconductor with an uneven surface charge distribution can produce a composite with a rough surface, i.e., a large specific surface area.
materials science, multidisciplinary,physics, applied
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