Current-Induced Magnetization Switching Across a Nearly Room-Temperature Compensation Point in an Insulating Compensated Ferrimagnet
Yan Li,Dongxing Zheng,Chen Liu,Chenhui Zhang,Bin Fang,Aitian Chen,Yinchang Ma,Xixiang Zhang,Aurélien Manchon
DOI: https://doi.org/10.1021/acsnano.2c01788
IF: 17.1
2022-05-13
ACS Nano
Abstract:Insulating compensated ferrimagnets, especially hosting room-temperature compensation points, are considered promising candidates for developing ultra-high-density and ultrafast magnonic devices owing to combining the characteristics of both ferromagnets and antiferromagnets. These intriguing features become outstanding close to their compensation points. However, their spin-orbit torque (SOT)-induced magnetization switching, particularly in the vicinity of the compensation points, remains unclear. Herein, we systematically investigated the SOT in insulating compensated ferrimagnetic Gd<sub>3</sub>Fe<sub>5</sub>O<sub>12</sub>/Pt heterostructures with perpendicular magnetic anisotropy. A nearly room-temperature compensation point (<i>T</i><sub>comp</sub> ∼ 297 K) was consistently identified by the magnetization curves, spin Hall-induced anomalous Hall effect, and spin Hall magnetoresistance measurements. Moreover, using 100 ns duration pulsed current, deterministic current-induced magnetization switching below and above <i>T</i><sub>comp</sub>, even at 294 and 301 K, was achieved with opposite switching polarity. It is found that a large current is required to switch the magnetization in the vicinity of <i>T</i><sub>comp</sub>, although the effective SOT field increases close to <i>T</i><sub>comp</sub>. Our finding provides alternative opportunities for exploring ultrafast room-temperature magnon-based devices.
materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology