Solution-processed transparent p-type orthorhombic K doped SnO film and its application in phototransistor

Li Qin,Shuoguo Yuan,Zequn Chen,Xue Bai,Jianmei Xu,Ling Zhao,Wei Zhou,Qing Wang,Jingjing Chang,Jian Sun

DOI: https://doi.org/10.1039/d2nr03785h

IF: 6.7

2022-08-25

Nanoscale

Abstract:The exploitation of p-type oxide semiconductors with excellent optoelectrical properties as well as simple preparation process is still challenging owing to the difficulty of producing hole carriers which results from strong hole localization in the p-type oxide semiconductor. In this work, we succeeded in using the ethylene glycol as the reductant to prepare orthorhombic structure SnO films using sol-gel method and through K doping the optical and electrical properties of the films were improved. When the orthorhombic K doped SnO (K-SnO) films were applied in a phototransistor, it presented ultra-broadband photosensing from ultraviolet to infrared (300-1000 nm), demonstrating the photoresponsivity of 349 A W-1, and detectivity of 5.45 × 1012 Jones at 900 nm under a light intensity of 0.00471 mW cm-2. In particular, the infrared photosensing was first reported in the SnO based phototransistors. This work not only provides a simple method to fabricate high-performance and low-cost p-type K-SnO films and phototransistors, but may also suggest a new way to improve p-type characteristics of other oxide semiconductors and devices.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry