Universal superlattice potential for 2D materials from twisted interface inside h-BN substrate

Pei Zhao,Chengxin Xiao,Wang Yao

DOI: https://doi.org/10.1038/s41699-021-00221-4

IF: 10.516

2021-04-12

npj 2D Materials and Applications

Abstract:Abstract Lateral superlattices in 2D materials provide a powerful platform for exploring intriguing quantum phenomena, which can be realized through the proximity coupling in forming moiré pattern with another layer. This approach, however, is invasive, material-specific, and requires small lattice mismatch and suitable band alignment, largely limited to graphene and transition metal dichalcogenides (TMDs). Hexagonal boron nitride (h-BN) of antiparallel (AA′) stacking has been an indispensable building block, as dielectric substrates and capping layers for realizing high-quality van der Waals devices. There is also emerging interest on parallelly aligned h-BN of Bernal (AB) stacking, where the broken inversion and mirror symmetries lead to out-of-plane electrical polarization. Here we show the that laterally patterned electrical polarization at a nearly parallel interface within the h-BN substrate can be exploited to create noninvasively a universal superlattice potential in general 2D materials. The feasibility is demonstrated by first principle calculations for monolayer MoSe 2 , black phosphorus, and antiferromagnetic MnPSe 3 on such h-BN. The potential strength can reach 200 meV, customizable in this range through choice of distance of target material from the interface in h-BN. We also find sizable out-of-plane electric field at the h-BN surface, which can realize superlattice potential for interlayer excitons in TMD bilayers as well as dipolar molecules. The idea is further generalized to AB-stacked h-BN subject to torsion with adjacent layers all twisted with an angle, which allows the potential and field strength to be scaled up with film thickness, saturating to a quasi-periodic one with chiral structure.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology

What problem does this paper attempt to address?

The problem that this paper attempts to solve is how to create a general superlattice potential in two - dimensional materials without relying on the traditional moiré fringe method. The traditional method is limited by the choice of materials (such as graphene and transition - metal dichalcogenides), and requires small lattice mismatch and appropriate band - gap alignment. In addition, these methods are usually invasive and may affect other properties of the target material.

To solve these problems, the authors propose a non - invasive method, using the electrode polarization generated by the twisted interface inside the hexagonal boron nitride (h - BN) substrate to create a superlattice potential. This method can be applied to a wide range of two - dimensional materials and is not limited by the material type and periodicity. In this way, the modulation of the electronic structure can be achieved without changing the inherent properties of the target material, thereby exploring new quantum phenomena.

Specifically, the paper mainly solves the following problems:
1. **Limitations of material selection**: Traditional methods are limited to specific materials such as graphene and transition - metal dichalcogenides.
2. **Invasive problem**: Traditional methods may change other properties of the target material.
3. **Requirements for lattice mismatch and band - gap alignment**: Traditional methods require small lattice mismatch and appropriate band - gap alignment.

By introducing the twisted interface inside the h - BN substrate, the authors show how to use the electrode polarization pattern to create a general superlattice potential, thus overcoming the above limitations. This method is not only applicable to a variety of two - dimensional materials, but also can customize the potential strength by adjusting the twist angle and the number of layers.

### Formula summary
The key formulas mentioned in the paper include:

- The expression of electrode polarization \(P(R)\):
\[
P(R)=P(r(R))
\]
where \(r(R)\) is a function that describes the local stacking registration.

- The expression of Coulomb potential \(V(R, z)\):
\[
V(R, z)=\int\frac{\Delta\rho(R', z')}{4\pi\varepsilon_0\sqrt{|R - R'|^2+(z - z')^2}}dR' dz'
\]
Under approximate conditions, it is simplified to:
\[
V(R, z)\approx\frac{\text{sgn}(z)P(R)}{2\varepsilon_0}e^{-G|z|}
\]
where \(G = \frac{4\pi}{\sqrt{3}b}\), and \(b\) is the period of the moiré fringe.

- The sum expression of superlattice potential:
\[
V_{\text{sum}}(R)=\sum_l V_0(R_l, z + ld)
\]

These formulas describe in detail how to create a superlattice potential through the twisted interface inside the h - BN substrate, and show the controllability of its strength and periodicity.