Abstract:Recently, defect luminescence-based ultralong persistent luminescent (PersL) materials have been increasingly appreciated for advanced applications. However, an in-depth understanding of trap manipulation is a big challenge in controlling trap distribution. In this work, we provide a complete understanding of defect-induced photoluminescence (PL) in Zn 2 GeO 4 and the significant role of different defects and defect complexes. Excitation-dependent tunable emissions from blue to green regions indicated different mechanisms for filling traps for different excitation energies. Time-resolved emission spectroscopy (TRES) revealed time-dependent trap distribution, shifting the PL band from blue to green. The existence of different electron–hole recombination pathways in different time windows shed light on the complex PL of Zn 2 GeO 4 . Systematic temperature-dependent PL studies imply different trapping and de-trapping processes. We demonstrate the activation energies for different trapping mechanisms and the role of negative thermal expansion (NTE) of Zn 2 GeO 4 in achieving the negative thermal quenching (NTQ) of PL. Further, the aliovalent doping of Pr 3+ was used for trap manipulation and introducing additional intermediate defect states. Density functional theory calculations as well as thermoluminescence and electron paramagnetic resonance studies revealed a reduction in defect formation energies for selective defects, four-fold increase in trap density, and trap re-shuffling to optimum trap depths (0.73 eV) on the doping of Pr 3+ . The rich trap distribution resulted in a two-fold increase in the quantum yield of green emissions (∼19%) due to Zn interstitial defects. Improved afterglow on UV charging and an increase in the afterglow time from a few minutes in undoped Zn 2 GeO 4 to an intense X-ray activated afterglow for 18 hours was observed in the Pr 3+ doped Zn 2 GeO 4 phosphor. Analysis of afterglow decay kinetics revealed the prominent trap-to-trap tunnelling mechanisms for long lifetimes. Impedance studies revealed the widening of electron channels and reduced resistance to electron movement with the incorporation of Pr 3+ ions that enhanced PersL. LED fabrication was carried out to demonstrate the potential of the Zn 2 GeO 4 phosphor for solid-state lighting. We believe that such kinetic and thermodynamic interpretation of defect chemistry will be helpful in tailoring the optoelectronic properties of native defect phosphors.

Modulation of trap distribution by optimizing Mn2 + doping in CsCdCl3 crystals toward enhanced afterglow performance

Ultralong afterglow and unity quantum yield from a transparent CsCdCl3:Mn crystal

Modulating trap properties by Cr3+-doping in Zn2SiO4: Mn2+ nano phosphor for optical information storage

Cr3+‐Activated Deep Trap Electron‐Trapping Biphasic Mixture of Zn (Al,Ga)2O4 and Zn2GeO4 for Multilevel Information Storage by Trap Multiplexing and Wavelength Multiplexing

Modulating Trap Properties by Nd3+- Eu3+ Co-Doping in Sr2SnO4 Host for Optical Information Storage

Extended Storage of Multiple Excitons in Trap States of Semiconductor Nanocrystals

Multicolor Luminescence and Afterglow from Cs2NaScCl6: Sb3+, Mn2+ Crystals

High‐Efficiency and Stable Long‐Persistent Luminescence from Undoped Cesium Cadmium Chlorine Crystals Induced by Intrinsic Point Defects

Realizing Color‐Tunable and Time‐Dependent Ultralong Afterglow Emission in Antimony‐Doped CsCdCl3 Metal Halide for Advanced Anti‐Counterfeiting and Information Encryption

Dynamic multicolor emissions of multimodal phosphors by Mn2+ trace doping in self-activated CaGa4O7

Excitation wavelength-dependent long-afterglow Sb, Mn-doped CsCdCl 3 perovskite for anti-counterfeiting applications

Mn 2+ -Activated Photostimulable Persistent Nanophosphors by Pr 3+ Codoping for Rewritable Information Storage

Promising Excitation-Responsive Phosphors CaxMgSi2Ox+5: Eu2+, Dy3+ with Dual-Mode Luminescent Centers for Advanced Anti-Counterfeiting Technology

Optical regulation by localized states of Cu2+ ions with highly sensitive to trap density and thermalization in manganese-doped perovskite nanocrystals

Trap engineering through chemical doping for ultralong X-ray persistent luminescence and anti-thermal quenching in Zn2GeO4

A Co-Doping Influence Towards Enhanced Persistent Duration of Long Persistent Phosphors

Efficient energy transfer from self-trapped excitons to Mn2+ dopants in CsCdCl3:Mn2+ perovskite nanocrystals

Unlocking long-lasting green luminescence in manganese-doped magnesium gallate

Stable and multicolor solid-state luminescence of Mn doped CsPb(Cl/Br)3 perovskite quantum dots and its application in light-emitting diodes

Cs 2 Cd 1– x Mn x Cl 4 Nanoplatelets for Thermal Quenching Resistance and Luminescence Tuning

Improved Energy Transfer in Mn-Doped Cs3Cu2I5 Microcrystals Induced by Localized Lattice Distortion