Nanostructured Ge/ZnS Films for Multispectral Camouflage with Low Visibility and Low Thermal Emission

Zichen Deng,Yarui Su,Wei Qin,Tao Wang,Xian Wang,Rongzhou Gong

DOI: https://doi.org/10.1021/acsanm.2c00088

IF: 6.14

2022-04-04

ACS Applied Nano Materials

Abstract:Multispectral camouflage technology against advanced detection has attracted rising attention in recent years. However, compatible camouflage with low visibility and low thermal emission in a dark background still remains challenging (such as satellites, high-altitude planes, etc.). In this work, a low visibility and low thermal emission nanostructured film with electromagnetic band gap for multispectral camouflage is proposed. The structure demonstrates a Ge/ZnS multilayer for suppressing thermal emission, which is mounted with nanolayered dielectric antireflection stacks to absorb visible light. Also, the all-dielectric configuration ensures microwave transmission for being compatible with microwave camouflage. The fabricated structure shows low reflectance (3.95%) for 300–1100 nm visible-near-IR light, low emissivity for 3–5 μm (0.043) and 8–14 μm (0.093) atmospheric window ranges, and high transmittance (98.86%) for 8–18 GHz microwave range. Moreover, the film exhibits low lightness and suppressed thermal radiation signatures with incident angles up to 60°. The proposed nanostructured Ge/ZnS film paves the way for multispectral camouflage and other applications such as solar–thermal conversion, radiation control, and optical sensing based on electromagnetic wave manipulation.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsanm.2c00088.TMM for calculation of the spectral reflectance (Note S1), calculated incident angle dependence of the IR reflectance of the TE and TM modes (Figure S1), spectral lines of different thicknesses of Ge (Figure S2), calculated incident angle dependence of the visible–NIR reflectance of the TE and TM modes (Figure S3), normalized absorption distribution profile of the structure at a laser wavelength of 1.06 μm (Figure S4), optical admittance locus of the structure at a laser wavelength of 1.06 μm (Figure S5), photograph of the experimental environment for thermal imager measurement (Figure S6), and a comparison between the previous works and this work (Table S1) (PDF)This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology