Comparison of substitution of Si for Ge and Ga in Eu8Ga16Ge30: Magnetic measurement and fitting

Lihua Liu,Xiaojun Liu,Wei Zhang,Ning Chen,Lihong Yang,Yang Li
DOI: https://doi.org/10.1016/j.jpcs.2021.110290
IF: 4.383
2021-12-01
Journal of Physics and Chemistry of Solids
Abstract:Nominal Eu8Ga12Si4Ge30 and Eu8Ga16Ge26Si4 were synthesized by using ARC + MS method. XRD and EDS analysis confirmed that Si enters the lattice. Substitution of Si for Ga reduces T C from 35 K to 20 K. But the substitution of Si for Ge only has little effect on T C. It is about 30 K for Eu8Ga16Ge26Si4. The decrease of T C is beneficial to the increase of magnetic entropy change. So the maximum value of magnetic entropy change − Δ S M max around T C under magnetic field change Δ H = 3 T increases to 7.6 and 6.1 J/kg﹒K for Eu8Ga12Si4Ge30 and Eu8Ga16Ge26Si4, respectively. They are both larger than the 6.0 J/kg﹒K of Eu8Ga16Ge30, especially Eu8Ga12Si4Ge30. So Ga is more important than Ge in terms of the physical properties of Eu8Ga16Ge30. The M − H data were fitted by Brillouin function. A series of parameters such as exchange parameter λ in Hexch = λM,the Lande factor g and total angular momentum quantum number J were obtained. Using these parameters, T C and − Δ S M max were calculated and compared with the above values.
physics, condensed matter,chemistry, multidisciplinary
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