Abstract:"Giant" CdSe@CdS colloidal quantum well (CQWs) having thickness of 9.5 to 17.5 monolayers, corresponding to vertical thickness from 3.0 to 5.8 nm, enable ultra‐high material gain coefficient reaching ≈140 000 cm−1 owing to their high number of states per energy. These CQWs with their ultra‐high material gain capabilities offer an exceptional platform for solution‐processed electrically‐driven thin‐film lasers and in‐solution lasing applications. Semiconductor colloidal quantum wells (CQWs) have emerged as a promising class of gain materials to be used in colloidal lasers. Although low gain thresholds are achieved, the required high gain coefficient levels are barely met for the applications of electrically‐driven lasers which entails a very thin gain matrix to avoid charge injection limitations. Here, "giant" CdSe@CdS colloidal quantum well heterostructures of 9.5 to 17.5 monolayers (ML) in total with corresponding vertical thickness from 3.0 to 5.8 nm that enable record optical gain is shown. These CQWs achieve ultra‐high material gain coefficients up to ≈140 000 cm−1, obtained by systematic variable stripe length (VSL) measurements and independently validated by transient absorption (TA) measurements, owing to their high number of states. This exceptional gain capacity is an order of magnitude higher than the best levels reported for the colloidal quantum dots. From the dispersion of these quantum wells, low threshold amplified spontaneous emission in water providing an excellent platform for optofluidic lasers is demonstrated. Also, employing these giant quantum wells, whispering gallery mode (WGM) lasing with an ultra‐low threshold of 8 μJ cm−2 is demonstrated. These findings indicate that giant CQWs offer an exceptional platform for colloidal thin‐film lasers and in‐solution lasing applications.

Enhanced Optical Gain from Photoactivated Colloidal Quantum Wells

Unraveling the Ultralow Threshold Stimulated Emission from CdZnS/ZnS Quantum Dot and Enabling High‐q Microlasers

The effect of annealing and photoactivation on the optical transitions of band-band and surface trap states of colloidal quantum dots in PMMA.

Ultrahigh Green and Red Optical Gain Cross-sections from Solutions of Colloidal Quantum Well Heterostructures

Sub-single exciton optical gain threshold in colloidal semiconductor quantum wells with gradient alloy shelling

Optical gain and lasing from bulk cadmium sulfide nanocrystals through bandgap renormalization

"Giant" Colloidal Quantum Well Heterostructures of CdSe@CdS Core@Shell Nanoplatelets from 9.5 to 17.5 Monolayers in Thickness Enabling Ultra‐High Gain Lasing

Enhancement of Optical Gain in Colloidal CdSe/CdS/ZnS Quantum Dots through Nanosecond Optical Pumping

Enhanced Photocurrent Generation In Proton-Irradiated "Giant" Cdse/Cds Core/Shell Quantum Dots

Green Stimulated Emission Boosted by Nonradiative Resonant Energy Transfer from Blue Quantum Dots

Single-Exciton Gain and Stimulated Emission Across the Infrared Optical Telecom Band from Robust Heavily-doped PbS Colloidal Quantum Dots

Low-threshold stimulated emission using colloidal quantum wells

Random Lasing in Composites of CdSe/CdZnS Colloidal Quantum Wells and Silica Nanoparticles

Upconversion Lasers: Stable and Low-Threshold Optical Gain in CdSe/CdS Quantum Dots: an All-Colloidal Frequency Up-Converted Laser (adv. Mater. 17/2015)

Exciton Control Enables High-Performance Colloidal Quantum Well Light-Emitting Diodes

Ultra‐Thin Infrared Optical Gain Medium and Optically‐Pumped Stimulated Emission in PbS Colloidal Quantum Dot LEDs

High-Q Microcavity Enhanced Optical Properties of CuInS2/ZnS Colloidal Quantum Dots Toward Non-Photodegradation

Single-Exciton Gain and Stimulated Emission across the Infrared Telecom Band from Robust Heavily-doped PbS Colloidal Quantum Dots

Enhanced Performance of an AlGaN-Based Deep-Ultraviolet LED Having Graded Quantum Well Structure

Sustained biexciton emission in colloidal quantum wells assisted by dopant-host interaction

High-Performance Deep Red Colloidal Quantum Well Light-Emitting Diodes Enabled by the Understanding of Charge Dynamics