Synthesis and Structures of Cobalt-Expanded Zirconium- and Cerium-Oxo Clusters as Precursors for Mixed-Metal Oxide Thin Films

Maximilian Seiß,Jonas Lorenz,Sebastian Schmitz,Marco Moors,Martin Börner,Kirill Monakhov
DOI: https://doi.org/10.1039/d4dt00328d
IF: 4
2024-04-26
Dalton Transactions
Abstract:Transforming current complementary metal-oxide-semiconductor (CMOS) technology to fabricate memory chips and microprocessors into environmentally friendlier electronics requires the development of new approaches to resource- and energy-efficient electron transport and switching materials. Metal and multi-metal oxide layers play a key role in high-end technical applications. However, these layers are commonly produced through high-energy and high-temperature procedures. Herein, we demonstrate our first attempts to obtain stimuli-responsive mixed-metal oxide thin films from solution-processed molecular precursors under milder conditions. The molecular compounds of interest were prepared by one-pot reactions of a CoII carboxylate complex, triethylamine (Et3N), N butyldiethanolamine (H2bda), and a hexanuclear complex [Ce6O4(OH)4(piv)12] (Hpiv = pivalic acid) or [Zr6O4(OH)4(ib)12(H2O)]∙3Hib (Hib = isobutyric acid) in acetonitrile solution. The resulting charge-neutral, heterometallic coordination compounds display a ligand-supported pentanuclear {CeIV3CoIII2} core (in 1) and a dodecanuclear {ZrIV6CoII6} core (in 2), exhibiting thermal stability up to ca. 100 °C in air. Compound 2 was deposited and analyzed on Au(111) and SiO2/Si(100) surfaces to explore its potential as a single-molecule precursor for the preparation of atomically precise, complex mixed-metal oxide thin films. The adsorption characteristics of it demonstrate the ability to form stable agglomerates on the investigated surfaces.
chemistry, inorganic & nuclear
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