Boosting the spin polarization and ferromagnetic stability of monolayer C3N through Strategic Mono-doping and Co-doping with copper (Cu) and vanadium (V)

Yong Niu,Ying Wang,Pan Wang,Xiaofei Zhang
DOI: https://doi.org/10.1039/d4nj01786b
IF: 3.3
2024-06-13
New Journal of Chemistry
Abstract:The inherently low spin polarization of ferromagnetism in two-dimensional C3N hinders its application in spintronics. Addressing this, the impact of (V, Cu) co-doping on the spin polarization in monolayer C3N has been systemically explored through first-principles calculations. The results reveal that doping with a single V or Cu atom at an N site significantly enhances spin polarization compared to doping at a C site. Moreover, substituting a single C or N atom with a V atom results in significantly enhanced spin polarization compared to replacement with a Cu atom. Significantly, V and Cu co-doping at different N sites in C3N systems uniformly favors ferromagnetic states. A remarkable boost in spin polarization is achieved through strategic co-doping of V and Cu at N sites, separated by a distance of 5.681 Å. This enhancement is attributed to the coupling interactions among the C 2p, N 2p, Cu 3d, and V 3d orbitals. The theoretical investigation suggests an effective route to greatly enhance the spin polarization through targeted 3d transition metal co-doping, contributing to the development of high-performance spintronic devices and advancing quantum computing technologies.
chemistry, multidisciplinary
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