Abstract:ContextTwo-dimensional semiconductor materials have received much attention in recent years due to their wide variety of applications in the field of nano-optoelectronic devices. In this project, we applied stresses ranging from −6 to +6% to the ZrSe2/HfSe2 heterostructure and systematically investigated its electrical and optical properties. It is discovered that stress can effectively modulate the forbidden bandwidth of the ZrSe2/HfSe2 heterojunction; whereas, under compressive stress, the forbidden bandwidth of the material decreases further until the bandgap is zero, leading to the material’s transformation from semiconductor to metal. The forbidden band gap of the ZrSe2/HfSe2 heterojunction increases with increasing horizontal biaxial tensile strain. We discovered that the light absorption performance of this heterostructure is significantly better than that of its similar monomolecular layer and that its light absorption intensity can reach an order of magnitude of 104. Under compressive and tensile stresses, the ZrSe2/HfSe2 heterojunctions exhibit different degrees of red or blue shift. The results indicate that constructing ZrSe2/HfSe2 heterojunctions and applying horizontal biaxial stresses to them can significantly modulate the optoelectronic properties of the materials. ZrSe2/HfSe2 heterojunction is a new type of high-performance photogenerated carrier transport device with a wide range of applications.MethodsThe calculations in this study are carried out the first principles approach of density functional theory, as implemented in the CASTEP module of Materials-Studio2019. The researchers used an ultrasoft reaction potential to calculate the interactions between the ion core and the electrons and applied the Perdew-Burke-Ernzerhof (PBE) and the generalized gradient approximation (GGA) to perform the calculations. The Monkhorst-Pack technique was employed to create the k-point samples utilized for integration on the Brillouin zone, and the k-point grid was uniformly 6 × 6 × 1. In addition, in order to avoid interactions between the atomic layers affecting the properties and stability of the material, such interactions were prevented by adding a 30 Å vacuum layer. Using a plane-wave energy cutoff of 500 eV and the convergence accuracy of the iterative process was set to 1 × 10−5 eV to ensure the accuracy of the computational results, and in addition. The maximum stress in the lattice was limited to less than 0.05 GPa or the interaction force between neighboring atoms was lower than 0.03 eV/Å. For the calculation of the properties of the optical properties, a k-point grid of 18 × 18 × 1 is used for optimization, and the polarization direction of the material is not taken into account, considering that the material is isotropic. This study proposes to apply the Tkatchenko-Scheffler (TS) dispersion correction method in DFT-D to appropriately represent the interlayer van der Waals interaction forces to solve inaccuracies in the computation of van der Waals interactions via density functional theory.

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Computational study of structural, elastic, electronic, phonon dispersion relation and thermodynamic properties of orthorhombic CaZrS$_3$ for optoelectronic applications

A Comprehensive First Principle Investigation of Ti-Doped Ca(Hf1–xTix)S3 Alloys: Implications on Electronic Structure and Stability with Hubbard Correction

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Optimised structural, electronic, optical and mechanical properties of SrTiO3-xHx for photovoltaic applications: a DFT insight

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Theoretical investigation on structural, electronic, optical and elastic properties of TiO2, SnO2, ZrO2 and HfO2 using SCAN meta-GGA functional: A DFT study

Investigation of a potential photovoltaic absorber based on first principles spectroscopic screening of chalcogenide perovskites: CaZrX3 (X = S, Se)

Exploring optoelectronic and thermal properties of HfS 2 /ZrS 2 heterojunction under mechanical strain, atomic doping and external electric field

First-Principles Investigation of the Structural, Elastic, Electronic, and Optical Properties of α- and β-SrZrS3: Implications for Photovoltaic Applications

Computational investigation of the phase stability, electronic, optical, phonon spectrum, and elastic behavior of layered perovskites Ca2XO4 (X = Zr, Hf) for optoelectronic applications

Investigation of optical and thermoelectric characteristics of novel zintl-phase alloys CaZn2X2 (X = P, As, Sb) for green energy applications

Exploring optoelectronic, thermodynamic and thermoelectric characteristics of ternary halide perovskites CaRbX3 (X = Cl or I) for photovoltaic and thermoelectric applications: a DFT insight

A numerical simulation and analysis of chalcogenide BaZrS 3 -based perovskite solar cells utilizing different hole transport materials

Strain-induced effects on the optoelectronic properties of ZrSe2/HfSe2 heterostructures

First-principles investigation of the structural, dynamical and dielectric properties of kesterite, stannite and PMCA phases of Cu2ZnSnS4

Exploring structural, optoelectronic, and thermoelectric properties of SrCaGe and SrCaSn half Heusler compounds

Structural Properties and Quasiparticle Band Structures of Cu-based Quaternary Semiconductors for Photovoltaic Applications

Electronic structure characterization by photoelectron spectroscopy of BaZrS3 perovskite powder and thin film

First principles study on structural, electronic and optical properties of HfS2(1−x)Se2x and ZrS2(1−x)Se2x ternary alloys