Transition Layer Assisted Synthesis of Defect Free Amine-Phosphine Based InP QDs

Junfeng Wang,Guohang Ba,Jie Meng,Shixu Yang,Shuyu Tian,Mengqi Zhang,Fei Huang,Kaibo Zheng,Tõnu Pullerits,Jianjun Tian
DOI: https://doi.org/10.1021/acs.nanolett.4c01648
IF: 10.8
2024-07-13
Nano Letters
Abstract:Environmentally friendly InP-based quantum dots (QDs) are promising for light-emitting diodes (LEDs) and display applications. So far, the synthesis of highly emitting InP-based QDs via safe and economically viable amine-phosphine remains a challenge. Herein, we report the synthesis of amine-phosphine based InP/ZnSe/ZnS QDs by introducing an alloyed oxidation-free In-ZnSe transition layer (TL) at the core-shell interface. The TL not only has the essential function of preventing oxidation of the...
materials science, multidisciplinary,nanoscience & nanotechnology,physics, applied,chemistry, physical, condensed matter
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