A Study on h‐BN Resistive Switching Temporal Response

Mirembe Musisi‐Nkambwe,Sahra Afshari,Jing Xie,Hailey Warner,Ivan Sanchez Esqueda

DOI: https://doi.org/10.1002/aelm.202400022

IF: 6.2

2024-06-23

Advanced Electronic Materials

Abstract:This work presents a study on temporal resistive switching response to driving stimulus on h‐BN memristors. The study describes conductive path mechanisms and means to optimize programming latencies and state transition energy to achieve < 10 pJ switching energies and < 25 ns set programming latencies with guided opportunities for further optimization. Previous work that studied hexagonal boron nitride (h‐BN) memristor DC resistive‐switching characteristics is extended to include an experimental understanding of their dynamic behavior upon programming or synaptic weight update. The focus is on the temporal resistive switching response to driving stimulus (programming voltage pulses) effecting conductance updates during training in neural network crossbar implementations. Test arrays are fabricated at the wafer level, enabled by the transfer of CVD‐grown few‐layer (8 layer) or multi‐layer (18 layer) h‐BN films. A comprehensive study of their temporal response under various conditions–voltage pulse amplitude, edge rate (pulse rise/fall times), and temperature–provides new insights into the resistive switching process toward optimized devices and improvements in their implementation of artificial neural networks. The h‐BN memristors can achieve multi‐state operation through ultrafast pulsed switching (< 25 ns) with high energy efficiency (≈10 pJ pulse−1).

materials science, multidisciplinary,nanoscience & nanotechnology,physics, applied