Abstract:In this review, first, the crystallization characteristics of CsPbX3 perovskites are briefly introduced. Second, the recent exciting progress in the crystallization modulation strategies for high‐quality CsPbX3 films and high‐performance solar cells is summarized and discussed in detail. The advantages of different strategies, including annealing engineering, solvent engineering, precursor engineering, composition engineering, and interface engineering, are highlighted. All‐inorganic CsPbX3 (X = I, Br, Cl or their mixtures) perovskites attract enormous attention in recent years due to their excellent optoelectronic properties, outstanding thermal/light stability, and wide range of applications in electronic devices. Encouragingly, the reported power conversion efficiency of CsPbX3 perovskite solar cells (PSCs) rockets up from 2.9% in 2015 to the present 21.0%. In order to further promote the performance of CsPbX3 PSCs toward the Shockley–Queisser efficiency limit, it is important to optimize the quality of perovskite films by crystallization kinetics modulation and defect suppression. In this review, first, some fundamental information about all‐inorganic CsPbX3 perovskites is briefly introduced, including the crystallization mechanism, growth mode, crystal structure, and phase stability as well as possible defects and their effects on device performance. Second, the recent exciting progress of the crystallization modulation strategies for high‐quality CsPbX3 films is summarized and discussed in detail. The advantages of different strategies, including annealing engineering, solvent engineering, precursor engineering, composition engineering, and interface engineering, are highlighted. Finally, methods for improving the efficiency of inorganic PSCs are discussed, and the future development prospects of inorganic PSCs are also outlined.

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