Atomic Cu and Ni anchoring on h-BN for O2 activation and subsequent oxidative desulfurization

Naixia Lv,Jinrui Zhang,Jie Yin,Hongshun Ran,Yuan Zhang,Tianxiao Zhu,Hongping Li
DOI: https://doi.org/10.1016/j.catcom.2022.106492
IF: 3.51
2022-10-01
Catalysis Communications
Abstract:The rational design of the single transition metal atoms (Cu and Ni) anchoring on the boron nitride (TM-BN) pristine and defective monolayer has been investigated by means of density functional theory. Our calculations revealed that both B-vacancy (VB) and N-vacancy (VN) on BN monolayer are good sites for trapping Cu and Ni atoms. TM/VN and TM/h-BN systems exhibit high catalytic activity toward O2 activation and subsequent oxidative desulfurization (ODS) reactions. Considering the stability, the TM/VN is expected to be a good catalyst for ODS process.
chemistry, physical
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