Abstract:Silicon plays an important role in the mordern photovoltaic and semiconductive industry. In addition, it also arouses great interest in the scientific research due to its structural variety. In experiment, more than thirteen silicon allotropes have been prepared through high pressure or chemical method. Meanwhile, various new silicon structures have been proposed theoretically. The structural variety leads to various electronic properties, including semiconductivity with different band gaps, metallicity, and superconductivity. These electronic properties have a close relationship with the silicon atomic coordination. For example, silicon allotropes with merely four coordinated atoms usually exhibit semiconductive property, while silicon structures with higher coordination number would show metallicity or superconductivity. Thus far, all the synthesized metastable silicon allotropes are composed of four coordinated atoms. Silicon allotropes with higher coordination numbers are mainly high pressure phases which could not be quenched to the ambient condition. One might wonder whether there would be possibility for the preparation of metastable metallic silicon structures. In this paper, a new metallic metastable silicon allotrope has been proposed theoretically using the particle swarm optimization method. This structure was also found when removing the La atoms in α-LaSi5. Its stability was verified by calculating its elastic constants and phonon spectrum. It might be achieved by removing the La atoms from the α-LaSi5 precursor, which is analogous with the recent preparation of Si24. The tunnel-like voids in this structure lead to its lower density than that of the Si-I phase. There are 40% five coordinated silicon atoms, wheras the others are four coordinated. Since silicon has four valence electrons, sp3 hybridized four connected silicon just satisfy the octet rule and would show semiconductivity. The change of coordination number results in a charge transfer between different atoms as indicated by the atomic population. Five connected silicon atoms need more electrons to bonding with other atoms. Electronic band structure calculation indicated that this structure possess metallic property. The metallicity might be due to the delocalization of valence electrons which is induced by the existence of five coordinated atoms. The chemical bonding in this structure includes covalency, metallicity, and ionicity.

Global Planar Tetra‐, Penta‐ and Hexa‐coordinate Silicon Clusters Constructed by Decorating SiO3 with Alkali Metals

Planar Tetracoordinate Silicon in Si3Cu3− Cluster

Magic Numbers in Silicon Dioxide-Based Clusters

Pentaatomic Planar Tetracoordinate Silicon with 14 Valence Electrons: A Large-Scale Global Search of SiXnYmq (n + M = 4;q = 0, ±1, −2; X, Y = Main Group Elements from H to Br)

Magic Number Silicon Dioxide-Based Clusters: Laser Ablation-Mass Spectrometric and Density Functional Theory Studies

A New Metastable Metallic Silicon Allotrope

Structures and Stabilities of Small Silicon Clusters : Ab Initio Molecular-Orbital Calculations of Si 7 – Si 11

Magic numbers of silicon clusters

Magic Number Behaviour and Structures of Silicon Dioxide-Based Clusters

Si10: A Sp3 Silicon Allotrope with Spirally Connected Si5 Tetrahedrons

Structures and Stability of Medium Silicon Clusters. Ii. Ab Initio Molecular Orbital Calculations of Si-12-Si-20

Structural and Electronic Properties of Metal-Encapsulated Silicon Clusters in A Large Size Range

Mono-silicon Isoelectronic Replacement in CAl4 : Van't Hoff/le Bel Carbon or Not?

The Structure and Stability of Si@Al12Hn (n=1−14) Clusters

On the stability of "non-magic" endohedrally doped Si clusters: A first-principles sampling study of MSi16^+ (M =Ti,V,Cr)

First-Principles Calculations Of Metal Stabilized Si-20 Cages

The nature of structure and bonding between transition metal and mixed Si-Ge tetramers: A 20-electron superatom system

Ternary XBe4H5− (X = Si, Ge, Sn, Pb) Clusters: Planar Tetracoordinate Si/Ge/Sn/Pb Species with 18 Valence Electrons

Oxygen adsorption on small Si clusters: A full-potential linear-muffin-tin-orbital molecular-dynamics study

Stability and Electronic-Properties of Nanoscale Silicon Clusters

A Stable Silicon(0) Compound with a Si=Si Double Bond