Abstract:While cadmium telluride (CdTe) thin films are being used in solar cell prototyping for decades, the recent advent of two-dimensional (2D) materials challenges the fundamental limit for thickness of conventional CdTe layers. Here, we report our theoretical predictions on photocarrier dynamics in an ultimately thin (about 1 nm) CdTe slab. It corresponds to a layer that is just a single unit cell thick, when the bulk parent crystal in the zinc blende phase is cleaved along the [110] facet. Using an \textit{ab-initio} method based on density functional theory (DFT) and the Boltzmann equation in the relaxation time approximation (RTA), we determine the thermalization time for charge carriers excited to a certain energy for instance through laser irradiation. Our calculations include contributions arising from all phonon branches in the first Brillouin zone (BZ), thus capturing all relevant inter- and intraband carrier transitions due to electron-phonon scattering. We find that the photocarrier thermalization time is strongly reduced, by one order of magnitude for holes and by three orders of magnitude for electrons, once the CdTe crystal is thinned down from the bulk to a monolayer. Most surprisingly, the electron thermalization time becomes independent of the electron excess energy up to about 0.5~eV, when counted from the conduction band minimum (CBM). We relate this peculiar behavior to the degenerate and nearly parabolic lowest conduction band that yields a constant density of states (DOS) in the 2D limit. Our findings may be useful for designing novel CdTe-based optoelectronic devices, which employ nonequilibrium photoexcited carriers to improve the performance.

Experimental detection of light holes in CdTe single crystals

Exciton Properties of Diluted CdTe/CdMnTe Quantum Wells

Photo-Hall effect spectroscopy with enhanced illumination in p-Cd1-xMnxTe showing negative differential photoconductivity

Dual-wavelength Photo-Hall effect spectroscopy of deep levels in high resistive CdZnTe with negative differential photoconductivity

Excitation-density and Excess-Energy Dependence of Ultrafast Dynamics of Photoexcited Carriers in Intrinsic Bulk CdTe

Two-Dimensional Electron Gas at the Metastable Twisted Interfaces of Cdte/Pbte (111) Single Heterojunctions

Two-valence band electron and heat transport in monocrystalline PbTe-CdTe solid solutions with high Cd content

Experimental observation of spin-dependent electron many-body effects in CdTe

Hole Relaxation Bottlenecks in CdSe/CdTe/CdSe Lateral Heterostructures Lead to Bicolor Emission

Strong magnetic field effect on above-barrier transport in Pb-p-HgCdTe Schottky barriers

Minority Carrier Mobility Measurement in HgCdTe with Light-Modulated Hall Effect

Terahertz photoconductivity of double acceptors in narrow gap HgCdTe epitaxial films grown by molecular beam epitaxy on GaAs(013) and Si(013) substrates

Terahertz properties of Dirac fermions in HgTe films with optical doping

Native point defects in HgCdTe infrared detector material: Identifying deep centers from first principles

Study of Photoreflectance Spectroscopy in Semiconductor Cd1-xMnxTe/CdTe Superlattices with High Compositions

Charge-carrier thermalization in bulk and monolayer CdTe from first principles

Investigation of Defect Levels in Cs2hg6s7 Single Crystals by Photoconductivity and Photoluminescence Spectroscopies

Energy spectrum of valence band in HgTe quantum wells on the way from a two to the three dimensional topological insulator

Symmetry breaking and circular photogalvanic effect in epitaxial Cd$_x$Hg$_{1-x}$Te films

DLTS Study of Defects in HgCdTe Heterostructure Photodiode

New insight into defect energy levels in HgCdTe