P-Type Β-Ga2o3 Film Room-Temperature NH3 Gas Sensors with Fast Gas Sensing and a Low Limit of Detection

Hongchao Zhai,Zhengyuan Wu,Kai Xiao,Meiying Ge,Chenxing Liu,Pengfei Tian,Jing Wan,Jianlu Wang,Junyong Kang,Junhao Chu,Zhilai Fang
DOI: https://doi.org/10.1039/d4tc03313b
IF: 6.4
2024-01-01
Journal of Materials Chemistry C
Abstract:Ammonia (NH3) gas sensing is critical for practical applications in the environmental monitoring of NH3 pollution from food, chemical and agricultural industries. However, it is difficult to achieve room-temperature (RT) ammonia gas sensors fabricated on n-type Ga2O3 materials owing to the weak exchange of carriers between NH3 gas and surface-adsorbed oxygen ion species for n-type semiconductors. Good sensing performance is expected to be achieved by p-type Ga2O3 gas sensors because of the special gas adsorption and chemisorbed reactions of the surface hole-accumulation layer. In this study, p-type N-doped beta-Ga2O3 film gas sensors with RT NH3 gas sensing were fabricated with wide hole-accumulation layers of 44.5 nm at 300 K. The p-type beta-Ga2O3 gas sensors exhibited a response of 219.1% and short response/recovery time of 42.3/60 s towards 50 ppm NH3. The good response linearity with a linearity factor of 0.33 and a low limit of detection of 1 ppm were observed for the p-type beta-Ga2O3 gas sensors. The good RT NH3 sensing performance originates from the wide hole-accumulation layer with the good gas adsorption and chemisorption reactions. This work opens an avenue for the fabrication of RT NH3 gas sensors on p-type oxide films, lays the foundation for p-type beta-Ga2O3 gas sensing, and paves the way for the evolution of RT gas sensors fabricated on p-type oxides.
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