Sulfur-doped G-C3n4/v2c MXene Schottky Junctions for Superior Photocatalytic H2 Evolution

Haitao Wang,Jipeng Fan,Jing Zou,Yujie Zheng,Dingsheng Wang,Jizhou Jiang
DOI: https://doi.org/10.1039/d4ta05929h
IF: 11.9
2024-01-01
Journal of Materials Chemistry A
Abstract:Graphitic carbon nitride (g-C3N4) is considered to be a promising photocatalyst for the hydrogen evolution reaction (HER). However, the photocatalytic HER performance of pristine g-C(3)N(4 )is unsatisfactory. In this work, theoretical predictions reveal that integrating sulfur dopants and coupling vanadium carbide (V2C) MXene can significantly optimize the hydrogen adsorbed Gibbs free energy (Delta G(H)*) of g-C(3)N(4 )to near zero. Inspired by the theoretical predictions, a sulfur-doped g-C3N4/V2C MXene (SCN/V2C) Schottky junction photocatalyst is fabricated by vacuum ball milling and subsequent annealing treatment. The strong SCN-V2C interface-electron interaction not only improves hydrophilicity and light absorption, but also facilitates the separation and migration of photoexcited carriers. Density functional theory calculations and the in situ characterization results corroborate that the carrier migration of SCN/V2C adheres to the typical Schottky heterojunction mechanism. Femtosecond transient absorption (fs-TA) spectroscopy demonstrates the favorable carrier dynamic behavior of SCN/V2C. Thus, SCN/V2C achieves a superior H-2 production rate of 8003 mu mol g(-1) h(-1). This research provides valuable insights into the further strategic design and construction of high-performance Schottky heterojunction catalysts.
What problem does this paper attempt to address?