Design and Simulation of Input Cavity of W-Band Extended Interaction Klystron

Wanli Shi,Zheng Tan,Guoxin Ren,Shilong Zhu,Haiying Yuan,Luanfeng Gao,Xiaofang Zhu,Bin Li,Yulu Hu
DOI: https://doi.org/10.1109/ivecivesc60838.2024.10695016
2024-01-01
Abstract:The Extended Interaction Klystron (EIK) amplifier is a high-power, high-frequency microwave device widely used in millimeter-wave band. Through the input cavity of an extended interaction klystron, the external microwave signal is introduced and the microwave electric field is established across the cavity gap, thus, the passing electron beam is modulated. This paper analyzes the key considerations in the cavity design of extended interaction klystrons, which encompass operating mode, synchronization condition, effective impedance and normalized electron beam conductance. Finally, a 9-gaps input cavity for W-band extended interaction klystron is designed and analyzed using CST Studio Suite.
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