The Effect of Hydrostatic Pressure on Electric Transport Properties of Bulk Black Arsenic Phosphorus Single Crystals

Jing Li,Lingxiao Zhao,Zhao Liu,Yanzhao Wang,Shan He
DOI: https://doi.org/10.1016/j.jallcom.2024.177973
IF: 6.2
2024-01-01
Journal of Alloys and Compounds
Abstract:Black arsenic phosphorus AsxP1-x (b-AsxP1-x), as a novel two-dimensional material, has recently attracted great attention owing to their exotic physical properties. Here, we report a systematic study of the pressure dependence of electric transport properties in b-As0.75P0.25 single crystal. At ambient pressure, b-As0.75P0.25 shows an extrinsic semiconducting behavior, and the magnetoresistance (MR) has an obvious dependence on the magnetic field direction, resulting in an anisotropic MR effect. With the applied hydrostatic pressure, the crystal exhibits a tendency towards metallic behavior, whereas at pressures above 1.0-1.3GPa, the resistivity starts to increase at low temperatures. This picture is simultaneously supported by low temperature high-pressure MR measurements. Taking into account the negative and positive contributions to the MR, we have been able to propose a modified two-band model to describe the MR properties. The analysis of the MR data reveals the coexistence of high-mobility electrons and holes with nearly identical carrier densities. Above the critical pressure, the density of the electron that remains dominant increases with pressure while the electron mobility decreases significantly under pressure, leading to a transition in resistivity. This work has implications to both the fundamental understanding of bulk b-As0.75P0.25 and studies of two-carrier correlated materials.
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