Abstract:Because of its ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates grown from the melt, β-Ga2O3 has attracted great attention recently for potential applications of power electronics. However, its thermal conductivity is significantly lower than those of other wide bandgap semiconductors, such as AlN, SiC, GaN, and diamond. To ensure reliable operation with minimal self-heating at high power, proper thermal management is even more essential for Ga2O3 devices. Similar to the past approaches aiming to alleviate self-heating in GaN high electron mobility transistors, a possible solution has been to integrate thin Ga2O3 membranes with diamond to fabricate Ga2O3-on-diamond lateral metal-semiconductor field-effect transistor or metal-oxide-semiconductor field-effect transistor devices by taking advantage of the ultra-high thermal conductivity of diamond. Even though the thermal boundary conductance (TBC) between wide bandgap semiconductor devices and a diamond substrate is of primary importance for heat dissipation in these devices, fundamental understanding of the Ga2O3-diamond thermal interface is still missing. In this work, we study the thermal transport across the interfaces of Ga2O3 exfoliated onto a single crystal diamond. The van der Waals bonded Ga2O3-diamond TBC is measured to be 17 −1.7/+2.0 MW/m2 K, which is comparable to the TBC of several physical-vapor-deposited metals on diamond. A Landauer approach is used to help understand phonon transport across a perfect Ga2O3-diamond interface, which in turn sheds light on the possible TBC one could achieve with an optimized interface. A reduced thermal conductivity of the Ga2O3 nano-membrane is also observed due to additional phonon-membrane boundary scattering. The impact of the Ga2O3–substrate TBC and substrate thermal conductivity on the thermal performance of a power device is modeled and discussed. Without loss of generality, this study is not only important for Ga2O3 power electronics applications which would not be realistic without a thermal management solution but also for the fundamental thermal science of heat transport across van der Waals bonded interfaces.

Mode-Resolved Phonon Transmittance Across Ga2O3/SiC Interface Using Lattice Dynamics with Machine Learning Potentials

Mode-resolved phonon transmittance using lattice dynamics: Robust algorithm and statistical characteristics

Towards Accurate Predictions of Carrier Mobilities and Thermoelectric Performances in 2D Materials

Theoretical Analysis of Thermal Boundary Conductance of MoS2-SiO2 and WS2-SiO2 Interface

Dissimilar Thermal Transport Properties in Κ-Ga2o3 and Β-Ga2o3 Revealed by Homogeneous Nonequilibrium Molecular Dynamics Simulations Using Machine-Learned Potentials

Machine learning enables robust prediction of thermal boundary conductance of 2D substrate interfaces

Structure and lattice thermal conductivity of grain boundaries in silicon by using machine learning potential and molecular dynamics

Interface Thermal Conductance Between Β-Ga2o3 and Different Substrates

Machine Learning Interatomic Potential Developed for Molecular Simulations on Thermal Properties of Β-Ga2o3.

First-Principles-Based Quantum Transport Simulations of High- Performance and Low-Power MOSFETs Based on Monolayer Ga2O3

Interfacial Phonon Transport Through Si/Ge Multilayer Film Using Monte Carlo Scheme with Spectral Transmissivity

Dissimilar thermal transport properties in $κ$-Ga$_2$O$_3$ and $β$-Ga$_2$O$_3$ revealed by machine-learning homogeneous nonequilibrium molecular dynamics simulations

Determining the Thermal Conductivity and Phonon Behavior of SiC Materials with Quantum Accuracy Via Deep Learning Interatomic Potential Model

Thermal conductance across β-Ga 2 O 3 -diamond van der Waals heterogeneous interfaces

Thermal boundary conductance of metal diamond interfaces predicted by machine learning interatomic potentials

Role of Elastic Phonon Couplings in Dictating the Thermal Transport across Atomically Sharp SiC/Si Interfaces

Interfacial thermal transport driven by phonon wave behaviors and its tunability in GaN-on-diamond devices

Thermal Boundary Conductance Enhancement of the Si/Diamond Interface via Atomic Transition Strategy

Accurate estimation of interfacial thermal conductance between silicon and diamond enabled by a machine learning interatomic potential

Accurate description of high-order phonon anharmonicity and lattice thermal conductivity from molecular dynamics simulations with machine learning potential

Analytical model for thermal boundary conductance based on elastic wave theory