Construction of S/Sv-ZnIn2S4 Heterojunction for Significantly Enhanced Photocatalytic Degradation of TBBPA

Ya-Ge Liu,Zhenyu Han,Jiale Shi,Yibing Jia,Ruixue Zhang,Yalin Wang,Jiawei Hou,Xiaochun Liu,Hongna Zhang,Hai-Ying Jiang
DOI: https://doi.org/10.1016/j.apsusc.2024.161256
IF: 6.7
2025-01-01
Applied Surface Science
Abstract:Composites consisting of singlet S and sulfur vacancy - rich ZnIn2S4 (S/S-V-ZnIn2S4) synthesized by a solvothermal method. The singlet S, grows on the surface of ZnIn2S4, forms a type II heterojunction with ZnIn2S4 to promote the separation of the photocarriers. The doping of sulfur vacancies (S-V) enhanced the absorption of the catalyst in the visible region, promoted the generation and separation of photogenerated carriers, and acted as active sites, improving the photocatalytic activity of ZnIn2S4 for tetrabromobisphenol A (TBBPA) degradation. The O-2(-) acted as the reactive oxygen species to oxidatively degrade TBBPA until mineralization. Under visible light irradiation, the degradation rate reached 100 % in 12 min, which was three times higher than that of pristine ZnIn2S4. The highest degradation amount is as high as similar to 200 mgg(cat)(-1) at a speed of 16.60 mgg(cat)(-1)min(-1). This work provides an efficient system for the degradation of TBBPA and achieves the highest concentration of TBBPA available.
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