CMOS and CCD detection in Raman spectroscopy: a comparison using spontaneous and multiplex coherent anti-Stokes Raman scattering (CARS)

Wesley Browne,W. J. Niels Klement,Philippe Leproux,Hideaki Kano

DOI: https://doi.org/10.26434/chemrxiv-2024-vqjlz

2024-09-16

Abstract:Cooled CCD cameras are used widely in spectroscopy, mainly due to their sensitivity and low noise operating under low light conditions, and relatively high image and spectral readout rates. Despite their many advantages, CCD cameras have limitations. Particularly under bright light conditions, such as those encountered with coherent Raman spectroscopies, where the finite readout time of CCD chips is limiting. Furthermore, where weak signals need to be observed close to intense signals, blooming and smearing limit the signal to noise ratios achievable. Scientific complementary mixed oxide (sCMOS) based sensors are relatively new. Although they still show much higher readout noise than cooled CCDs, their application to spectroscopy is certainly of interest given the higher readout rates, and dynamic ranges possible. Here, we evaluate sCMOS sensors for specific spectroscopic applications, including multiplex (50 picosecond) CARS and spontaneous Raman spectroscopy. We compare the performance of a sCMOS based camera to a state-of-the-art (EM)CCD detector for these applications. The EMCCD camera outperforms the sCMOS camera in terms of limits of detection, while the sCMOS camera performs better than the CCD in terms of dynamic range and readout rate. Importantly, sCMOS camera does not suffer from interference due to blooming and smearing seen with CCD cameras, which enables observation of weak bands (e.g., Raman overtones) close to much more intense signals. Here we show that, at moderate readout rates, the relative performances of the two detector types are not substantially different. We anticipate that sCMOS based cameras will find application for bright spectroscopies, such as multiplex CARS, as well as spontaneous Raman spectroscopy, and Raman spectral imaging.

Chemistry

What problem does this paper attempt to address?

The paper primarily explores the performance comparison between scientific complementary metal-oxide-semiconductor (sCMOS) sensors and electron-multiplying charge-coupled devices (EM-CCD) in Raman spectroscopy. Specifically, the paper focuses on the following points:

1. **Detection Limit**: The study investigates the differences in detection limits between sCMOS sensors and EM-CCD. The results show that under low light conditions, EM-CCD performs better in terms of signal-to-noise ratio; whereas under high light conditions, sCMOS has a higher dynamic range and readout rate.

2. **Dynamic Range**: sCMOS sensors outperform EM-CCD in terms of dynamic range. Particularly when dealing with weak signals near strong signals, sCMOS can avoid the overflow and blooming effects common in CCDs, thereby improving the detection quality of weak signals.

3. **Application Range**: The paper points out that sCMOS sensors are suitable for high-brightness spectroscopic techniques (such as multiplex coherent anti-Stokes Raman scattering [mCARS]), as well as spontaneous Raman spectroscopy and Raman spectral imaging.

Through experimental comparisons, the paper demonstrates the performance of the two sensors under different exposure times and signal intensities, and analyzes their respective advantages and disadvantages. Overall, although EM-CCD performs better under low light conditions, sCMOS sensors, with their high dynamic range, faster readout speed, and lower cost, show potential advantages in many high-brightness spectroscopic applications.