Effects of Electron Prebunching on the Radiation Growth Rate of a Collective (raman) Free-Electron Laser Amplifier

C. Leibovitch,Kaichen Xu,G. Bekefi
DOI: https://doi.org/10.1109/3.7122
IF: 2.5
1988-01-01
IEEE Journal of Quantum Electronics
Abstract:Experiments are reported on the effects of electron prebunching in a mildly relativistic, low-current (200-KV, 1-A) free-electron laser amplifier operating in the collective (Raman) regime at a frequency of approximately 10 GHz. Prebunching is established by injecting an electromagnetic wave into a bifilar helical wiggler and then transporting the bunched beam into a second magnetic wiggler region. The wave growth rate is deduced from measurements of the radiation intensity as a function of interaction length. Observations show that prebunching can increase the radiation growth rate manyfold as compared with a system without prebunching. Studies are presented both in the small-signal (linear) regime, and in the nonlinear (saturated) regime. >
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