Abstract:BiVO4 has been widely studied in photovoltaic conversion. However, as a paraelectric material, BiVO4 lacks an internal electric field for efficient carrier separation, resulting in low photocurrent and limited practical use. Enhancing the photovoltaic performance of thin films through simple methods is challenging. In this paper, M-Mo6+ (M=Fe3+, Co2+, Ni2+) ions were used to co-doped BiVO4 films, which were then composited with NiO to construct composite film structures. The NiO/Bi0.985Co0.015V0.985Mo0.015O4 film achieved a photocurrent density (J(sc)) of 2.33 mA/cm(2) and an open-circuit voltage (V-oc) of 0.39 V. The film also demonstrated a specific detection rate of 2.67 x 10(11) jones at an optical power density of 165 mW/cm(2) and maintained 1.94 x 10(11) jones at 103.7 mW/cm(2). At an optical power density of approximately 140 mW/cm(2), the specific detection rate begins to decrease. The photovoltaic conversion performance of the film exhibits high stability over a long period of time (> 10,000 s). The thin films maintain good photovoltaic performance at high temperatures. This work provides an approach for the application of BiVO4 in photovoltaics.

Ultrahigh Stability Photovoltaic Performance of M-Mo6+ (m=fe3+, Co2+, Ni2+) Co-Doped BiVO4 Films