Abstract:High spin-orbit coupling and low effective mass of electrons in InAs nanowires makes it an attractive material for studying quantum physics in mesoscopic and nanoscale quantum devices. We first study the transport properties of FET devices made of InAs nanowires of diameter in the range of 35-70 nm. The temperature dependence of electron mobility in InAs nanowires from 10-200 K exhibits a positive slope below approximately 40 K, then turns over to a negative slope at higher temperatures. This is explained by Coulomb scattering from the surface donor like states that give rise to a subsurface accumulation layer and the thermal activation of these surface donors. The scattering rates are calculated using a momentum relaxation time approximation. The transition probabilities between the self-consistent Poisson-Schrödinger states of a 50 nm diameter nanowire are calculated using Fermi’s golden rule. The results clarify the dominant scattering mechanism in InAs nanowires and signify the need for surface passivation to obtain high mobility devices. In a second study, we model a gate defined double quantum dot in the nanowire with high spin-orbit coupling in order to determine the precise gate voltage dependence of the exchange Hamiltonian. This modelling is critical for designing two-qubit quantum logic operations in the nanowire double dot architecture. A quantum double well structure is simulated based on the realistic potential created by a set of fine local electrostatic gates in the presence of nanowire surface accumulation layer. An effective spin Hamiltonian is derived for a pair of interacting electrons localized in the double dot system in the presence of a strong spin-orbit coupling. The accuracy of the effective Hamiltonian is established by a strong agreement obtained between the dynamics generated by the effective Hamiltonian with those obtained by a numerically exact solution of the time-dependent Schrödinger equation. The parametric dependences of the effective exchange Hamiltonian on external magnetic field, barrier gate voltage, and spin-orbit field is determined. This opens the door to designing optimal pulses for high fidelity quantum gates in real InAs nanowire devices.

NUMERICAL CALCULATION OF ELECTRON ENERGY STATES FOR NANOSCOPIC InAs/GaAs QUANTUM RINGS

Calculation of Elastic Strain Fields for Single Ge/Si Quantum Dots

Low Energy Exciton States in a Nanoscopic Semi-Conducting Ring

Energy Levels and Far-Infrared Spectroscopy for Two Electrons in A Nanoscopic Semiconductor Ring

Modelling of Quantum Dots with the Finite Element Method

Finite element 3-D model of a double quantum ring: effects of electric and laser fields on the interband transition

Parametric Properties of the Electron Spin Relaxation Due to Spin-Orbit Interaction in Inas Quantum Dots

Rayleigh-Schrödinger perturbation theory for electron-phonon interaction in two dimensional quantum dots with asymmetric parabolic potential

An Exactly Solvable Model for a Strongly Spin-Orbit-coupled Nanowire Quantum Dot

Finite element method simulation of electronic and optical properties in multi-InAs/GaAs quantum dots

Modeling Single-Particle Energy Levels and Resonance Currents in a Coherent Electronic Quantum Dot Mixer

Monte Carlo Simulation of Quantum Dots 2D-3D Growth by MBE

Study on the effects of anisotropic effective mass on electronic properties, magnetization and persistent current in semiconductor quantum ring with conical geometry

Modification of Projected Velocity Power Spectra by Density Inhomogeneities in Compressible Supersonic Turbulence

Numerical studies of transport and anisotropic exchange interaction in InAs nanowires

Remarks on the Study of Electronic Properties and Photoionization Process in Rotating 2D Quantum Rings

Ab initio calculation of band edges modified by (001) biaxial strain in group IIIA–VA and group IIB–VIA semiconductors: Application to quasiparticle energy levels of strained InAs/InP quantum dot

Energy Levels of Nanodots Inside Semiconductor Nanowires

Electron and hole energy levels in InAs/GaAs quantum dots: Size and magnetic field effects

Persistent Current in a Mesoscopic Semiconductor Ring with Electron-Phonon Interaction in the Two-Band Model