Electronic Oxide-Metal Strong Interactions (EOMSI) Localized at CeOx-Ag Interface

Yangyang Li,Zhaorui Li,Jun Hu,Weixin Huang

DOI: https://doi.org/10.1021/acs.jpclett.4c01939

2024-01-01

Abstract:Electronic oxide-metal strong interactions (EOMSI) refer to the electronic oxide-metal interactions (EOMI) between oxide adlayers and underlying metal substrate that is strong enough to stabilize supported oxide adlayers in a low-oxidation state, which individually is not stable under an ambient condition, from high temperature oxidation in air to a certain extent. Herein we report the deposition and electronic structure of CeOx adlayers on capping ligand-free cubic Ag nanocrystals, i.e., CeOx/Ag inverse catalysts. The EOMI occur via the charge transfer from Ag substrate to CeOx adlayers in the CeOx/Ag inverse catalyst, and the EOMSI are observed in the CeOx/Ag inverse catalyst with the average thickness of CeOx adlayers about 0.9 nm to exclusively form Ce2O3 adlayers stable against oxidation at 400 degrees C. As the thickness of CeOx adlayers increases, ceria adlayers with oxygen vacancies (CeO2-x) emerge and grow in the CeOx/Ag inverse catalysts, and the Ce3+/Ce4+ ratio decreases. Catalytic performance of CeOx/Ag inverse catalysts in the CO oxidation reaction is closely linked with the thickness and electronic structure of CeOx adlayers. These results demonstrate that the EOMSI and EOMI in the oxide/metal inverse catalysts are localized at the oxide-metal interface and sensitively vary with the thickness of oxide adlayers, offering a strategy of thickness engineering to tune electronic structures of oxide adlayers in oxide/metal inverse catalysts.