Highly Efficient InOOH/ZnIn2S4 Hollow Sphere S-Scheme Heterojunction with 0D/2D Interface for Enhancing Photocatalytic CO2 Conversion

Jiaxing Cai,Wendi Xu,Haoqiang Chi,Qian Liu,Wa Gao,Li Shi,Jingxiang Low,Zhigang Zou,Yong Zhou
DOI: https://doi.org/10.3866/pku.whxb202407002
2024-01-01
Acta Physico-Chimica Sinica
Abstract:S-scheme heterojunction system represents a highly efficient strategy for photocatalytic applications as it can simultaneously facilitate photogenerated charge carrier separation and enhance the reduction-oxidation potentials of the photocatalyst. Despite its gigantic potential, the photocatalytic CO2 conversion efficiency of the S-scheme heterojunction remains limited mainly attributed to the sluggish interfacial charge carrier migration and poor light utilization efficiency. Herein, we prepare an InOOH/ZnIn2S4 hollow sphere S-scheme heterojunction with 0D/2D contact interface for enhancing photocatalytic CO2 conversion performance. Specifically, the hollow sphere morphology can cause the multireflection of incident light within the photocatalyst leading to enhanced light absorption of the photocatalyst. In addition, the 0D/2D contact interface can facilitate the photogenerated charge carrier migration transfer over the InOOH/ZnIn2S4 S-scheme heterojunction. Furthermore, combining in situ irradiated X-ray photoelectron spectroscopy (ISIXPS) characterization and radicals trapping test, it is affirmed the accumulation of photogenerated holes and electrons respectively on InOOH and ZnIn2S4, which is beneficial for the effective utilization of photogenerated charge carriers. As a result, the photocatalytic CO2 conversion performance of the optimized InOOH/ZnIn2S4 is ca. 25.8 times higher than that of pristine ZnIn2S4. Our reported results demonstrate a facile yet effective strategy for enhancing the interfacial
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