Tuning the band gap and structure from wide gap SrBi3O4Cl3 to narrow gap Bi4O4SeCl2 by aliovalent anion substitution

Quinn D Gibson,Ieuan D Seymour,Tom Robinson,Ammara Safdar,John W Still

DOI: https://doi.org/10.26434/chemrxiv-2024-rrpfv

2024-08-02

Abstract:Modifying the atomic and electronic structure of materials by chemical substitution is a common method of achieving properties by design. Cations and metal atoms are the most frequent choices for chemical substitution; replacing anions with ones from a different chemical group is unusual due to the very different orbital energies and electronegativities involved. Here we demonstrate full substitution of Se by Cl in the visible band gap material Bi4O4SeCl2 charge balanced y simultaneous replacement of Bi with Sr, all the way to the wide gap photocatalyst material SrBi3O4Cl3. This compositional flexibility is associated with the layer-segregation of Sr and Se atoms. The crystal structure and electronic structure change non-linearly, with a compositional regime of two band gap transitions observed, due to the introduction of in-gap Se states to the electronic structure. The material CaBi3O4Cl3 is also synthesized, revealing the separate effects on the crystal structure of the anion and cation composition. This work presents aliovalent anion substitution in multiple anion materials as a strategy for tuning between narrow and wide gap materials, with properties showing more than one optical transition achievable at intermediate compositions.

Chemistry

What problem does this paper attempt to address?

The paper primarily explores the adjustment of the band gap and structure of materials through aliovalent anion substitution. Specifically, the research aims to adjust from the wide band gap material SrBi₃O₄Cl₃ to the narrow band gap material Bi₄O₄SeCl₂.

Key points of the paper include:

1. **Aliovalent Anion Substitution**: By completely replacing selenium (Se) with chlorine (Cl) and substituting strontium (Sr) for bismuth (Bi), a transition from the narrow band gap semiconductor Bi₄O₄SeCl₂ to the wide band gap semiconductor SrBi₃O₄Cl₃ was achieved. This substitution method differs from common isovalent or aliovalent cation substitution as it involves the replacement between anions from different chemical groups.

2. **Structural Changes**: As Se is replaced by Cl, the crystal structure and electronic structure of the material undergo nonlinear changes. Two band gap transitions were observed at certain compositional ratios, which are related to the introduction of Se states into the electronic structure.

3. **Optoelectronic Properties**: Due to the changes in the band gap, these materials may exhibit different optoelectronic properties, such as two-photon absorption phenomena, which have potential value for photocatalytic applications.

4. **Theoretical Calculations**: Density Functional Theory (DFT) calculations support the experimental results, indicating that the introduction of Se forms a semi-isolated band that weakly mixes with the states of O and Cl.

5. **Influence of Other Factors**: The study also examined the impact of alkaline earth metals on the material properties. For example, replacing Sr with calcium (Ca) can further increase the band gap, providing another method to adjust the material properties.

In summary, this paper demonstrates the potential of band gap tuning in multi-anion materials through aliovalent anion substitution technology. This method can produce new materials with unique optoelectronic properties, which are significant for applications such as photocatalysis.