Abstract:Using Atomsk and LAMMPS to construct nine bicrystal Mg models with preset voids and symmetric tilt grain boundaries, tensile simulations were performed at the same rate. The results showed that as the symmetric tilt grain boundary angle increased from 20° to 30°, the yield stress decreased from 2.28 to 1.42 GPa. Based on the plastic deformation and stress–strain curves, the nine bicrystal magnesium models with different symmetric tilt grain boundaries can be divided into two groups: the first group ranges from 20° to 40°, and the second group from 45° to 80°. A representative case is selected from each group. In the first group of models, the main modes of plastic deformation are grain boundary migration, basal dislocation slip, and stacking faults; whereas in the second group, there is a higher number of basal dislocation slips, leading to a greater quantity of stacking faults, and thus a stronger capacity for plastic deformation.2 A twin‐crystal magnesium (Mg) model with 9 different symmetric tilt grain boundary (STGB) angles (20°–80°) with preset nanohole defects is established by atomsk and lammps software. The mechanical behavior of grain boundary (GB) angles on twin‐crystal Mg with cavity defects and its cavity evolution are simulated by the molecular dynamics method with embedded atomic potential, and the plastic deformation mechanism is revealed. The results show that the yield stress decreases with the increase of the STGB Angle during the stretching process. When the GB Angle increases from 20° to 80°, the yield stress decreases from 2.28 to 1.42 Gpa. This is because the larger the STGB Angle is, the larger the Schmidt factor is, and the easier it is to start dislocation slip during the stretching process. On the other hand, the larger the Angle of STGB, the more the number of atomic voids at the interface, and the more the number of dislocation nucleation points. The larger the Angle of STGB, the lower the strength of twinning Mg but the better the plasticity to avoid fracture. The plastic deformation mechanism mainly includes the nucleation of Shockley incomplete dislocation at STGBs, dislocation slip generates stacking faults (SFs), GB migration, and base plane dislocations.

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