Magnetic Field Simulation and Measurement of MMC Submodule under Dual Pulse Test

Hailin Li,Zhongting Chang,Shuhong Wang,Yongjie Hu,Zhilei Si,Kepeng Xia,Lulu Liu,Kun Liu
DOI: https://doi.org/10.1109/cefc61729.2024.10585610
2024-01-01
Abstract:Modular multilevel converter(MMC) is widely applied to the UHVDC power transmission system for its advantages of bidirectional power transmission, power qualities, and flexible controls. With a large number of insulated gate bipolar transistors(IGBTs) utilized in MMC converter stations, an extremely complicated electromagnetic environment is generated due to the dv/dt and di/dt during the IGBT switching process. A finite element method(FEM) is adopted to calculate the dual pulse magnetic field generated by the 4.5kV/5kA IGBT MMC submodule during the dual pulse testing process. Then, a dual pulse test is conducted and the pulse magnetic field is measured to verify the simulation result. Finally, a fast Fourier transform (FFT) analysis is performed to give a comprehensive view of the switching process and its mechanism as an electromagnetic interference source.
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