Oxygen-vacancies-rich TinO2n-1 Quantum Dots Embedded Ti3CNTx/CNTs Foam by HCl Induced Self-Assembly and Spontaneous Oxidation Towards Strong and Multiband Microwave Absorption

Kexuan Hu,Yan Xu,Limei Pan,Qian Li,Yang Wang,Quan Li,Jian Yang
DOI: https://doi.org/10.1016/j.ceramint.2024.07.172
IF: 5.532
2024-01-01
Ceramics International
Abstract:Ti3CNTx/TinO2n-1 foam and Ti3CNTx/CNTs/TinO2n-1 foam were prepared by hydrochloric acid (HCl) induced self-assembly and freeze-drying, during which oxygen-vacancies-rich TinO2n-1 quantum dots in situ grown on Ti3CNTx nanoflakes as a result of their slight and spontaneous oxidation. The well-developed pore structure, abundant interfaces, unique dangling bonds, defects and terminated groups on highly conductive Ti3CNTxnanoflakes, as well as the oxygen vacancies in TinO2n-1 quantum dots render the foams with superior impedance matching, intensive multiple reflection and dielectric loss. By immersing the foams into molten paraffin (absorber content: 4.2wt%), excellent microwave absorption (MA) properties were achieved: an effective absorption band width (EAB) of 5.2 GHz (1.55 mm) and a reflection loss (RL) of -81.3 dB (1.85 mm) for Ti3CNTx/TinO2n-1foam, and an EAB of 6.4 GHz and a RL of -54.3 dB (1.85 mm) for Ti3CNTx/CNTs/TinO2n-1 foam (15wt% CNTs). Moderate addition of CNTs enhanced the conduction loss and polarization loss, leading to a larger EAB. When adjusting the thickness (1.2-5 mm), the EAB of Ti3CNTx/TinO2n-1 foam (14.7 GHz) and Ti3CNTx/CNTs/TinO2n-1 foam (15.3 GHz) both covered the C, X and Ku band. This work offers a simple and facile method for constructing Ti3CNTx-based foams as excellent MA materials.
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