Abstract:In this talk, we will review recent advances in the fabrication and characterization of silicon-based thin film structures for photonic applications, including rare earth doped silicon oxynitrides and luminescent silicon carbonitrides. For Si-based materials to be used in solid-state lighting (SSL) and silicon photonics schemes it is necessary to have precise control of the optical emission from these materials. This can be accomplished using rare earth dopants such as Ce, Tb, and Eu to obtain blue, green, and red emissions, respectively. After a brief review of the latest developments in the field, this talk will focus on Eu-doped films, which are attractive for silicon photonic applications due to their intense emission in the visible spectral region [1]. The films are fabricated by electron cyclotron resonance plasma enhanced chemical vapour deposition (ECR-PECVD) and doping is accomplished using a novel hybrid radio frequency (RF) magnetron sputtering source in the ECR-PECVD reactor chamber [2]. This approach contrasts with traditional doping methods which use metal-organic precursors to introduce rare-earth dopant species into the host matrix. We will discuss the relationship between the photoluminescence, elasticity, and hardness of Eu doped silicon oxynitride (SiON) thin films. As the efficiency of photonic devices can be influenced by the mechanical properties of the deposited films, a good understanding of their mechanical properties is required for the integration of these films in photonic devices. SiN x thin films, for example, play an important role in strain engineering of active photonic devices, such as diode lasers fabricated on GaAs or InP substrates. We will discuss results of a collaboration between McMaster and the Université de Rennes in France, aimed at quantifying the effects of structured dielectric thin films on the generation of a mechanical strain field in the semiconductor through tuning the amount of mechanical stress present in the dielectric thin film, as a function of the details of the deposition process [3]. [1] Fahmida Azmi et al., “Tunable Emission from Eu:SiO x N y Thin Films Prepared by Integrated Magnetron Sputtering and Plasma Enhanced Chemical Vapor Deposition”, J. Vac. Sci. Technol. A 40, 043402 (2022); https://doi.org/10.1116/6.0001761 [2] J.W. Miller et al., “Integrated ECR-PECVD and Magnetron Sputtering System for Rare-Earth-Doped Si-Based Materials”, Surface and Coatings Technology 336, 99 (2018); doi: 10.1016/j.surfcoat.2017.08.051 [3] Brahim Ahammou et al., “Strain engineering in III-V photonic components through structuration of SiN x films”, J. Vac. Sci. Technol. B 40, 012202 (2022); doi: 10.1116/6.0001352

Modulating Phononic Landscapes: The Role of Silicon Ion Bombardment in Tailoring Si/Si+Ge and SiO2/SiO2+Ge Superlattices for Advanced Neutron Superreflector Applications

J un 2 01 9 Ultraslow Dynamic Annealing of Neutron-induced Defects in n-type Silicon

Acoustic Attenuation and Optical-Absorption Effects on Light Scattering by Acoustic Phonons in Superlattices.

Optimization of measurement parameters in Doppler broadening spectroscopy

Modification of phonon processes in nanostructured rare-earth-ion-doped crystals

Impact of Silicon Ion Irradiation on Aluminum Nitride‐Transduced Microelectromechanical Resonators

Enhancing the Coherent Phonon Transport in SiGe Nanowires with Dense Si/Ge Interfaces

Photonic bound states in the continuum in Si structures with the self-assembled Ge nanoislands

Modification of the phonon spectrum of bulk Si through surface nanostructuring

Effect of Electron-Phonon and Electron-Impurity Scattering on Electronic Transport Properties of Silicon/Germanium Superlattices

Optical and Mechanical Properties of Si-Based Thin Films for Photonic Applications

Nanoscale Probing of Localized Surface Phonon Polaritons in SiC Nanorods with Swift Electrons

Silicon ion radiation as a viable surrogate for emulating neutron radiation damage in silicates

Measurement of swelling-induced residual stress in ion implanted SiC, and its effect on micromechanical properties

Simulations of Infrared Reflectivity and Transmission Phonon Spectra for Undoped and Doped GeC/Si (001)

Exploiting Phonon‐Resonant Near‐Field Interaction for the Nanoscale Investigation of Extended Defects

Spectroscopic investigation of quantum confinement effects in ion implanted silicon-on-sapphire films

Silicon lattice layer regulation: A close-to-atomic-scale method for optimizing infrared optical properties

Enhancing Neutron Radiation Resistance of Silicon-Based Semiconductor Devices Through Isotope Separation and Enrichment

Effect of Ion Irradiation on Nanoindentation Fracture and Deformation in Silicon Carbide

Nonlinear compositional and morphological evolution of ion irradiated GaSb prior to nanostructure formation