Junction Temperature and Current Perception of Silicon Thyristor Based on Electroluminescence Spectrum

Shuoyu Ye,Yutin Jin,Bin Yu,Yu Chen,Haoze Luo,Chushan Li,Wuhua Li,Xiangning He
DOI: https://doi.org/10.1109/ipemc-ecceasia60879.2024.10567874
2024-01-01
Abstract:Rapid perception of thyistor operation status is crucial for ensuring normal system operation. Using a micro-spectrometer, a wave crest is found in the near-infrared region during the conduction stage of Si thyristors. Similar to SiC MOSFETs, the electroluminescence spectrum of Si thyristors is related to temperature and current. This paper proposes a novel junction temperature (T j ) and current extraction method using electroluminescence spectrum characteristics of Si thyristors. The proposed method is validated by experiments under different working conditions. Compared with traditional thermal sensitive electrical parameter (TSEP) methods, this method is immune to electromagnetic interference and is especially suitable for high-voltage application conditions.
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