A 12-Level Series-Capacitor 48-1V DC–DC Converter With On-Chip Switch and GaN Hybrid Power Conversion
Haixiao Cao,Xu Yang,Chenkang Xue,Lenian He,Zhichao Tan,Menglian Zhao,Yong Ding,Wuhua Li,Wanyuan Qu
DOI: https://doi.org/10.1109/jssc.2021.3104328
2021-12-01
Abstract:This work presents a 48-1V dc–dc converter with an on-chip switch and gallium nitride (GaN) hybrid power conversion. By series connecting a 12-level Dickson switched-capacitor with a two-phase switched-inductor circuit, the capacitors take over most of the 48-V voltage stresses. The circuit, thus, reduces to an equivalent 4-1V converter, making the on-chip 5-V transistor applicable for a 48-V high-voltage design. Due to the easy integration of on-chip switches and superior switch figures of merit over other 48-1V counterparts, this proposed design is able to achieve the highest switching frequency, the lowest external switch count, and the improved power density compared with other prior-state-of-the-arts. The prototype was fabricated using a 0.18- BCD process with an evaluation board volume of 17 mm 15 mm 2.6 mm. The converter achieves a maximum 8-A loading capacity with the input range from 36 to 60 V and the output from 0.5 to 1 V. The measured peak power efficiency is 90.2%, and the power density is 998 A/in3 considering the power stage volume.
engineering, electrical & electronic