Multi-Tip Edge Coupler of Thin-Film Lithium Niobate Chip
Wang Jiayi,Cai Minglu,Li Tianyi,Zhang Xujia,Chen Jianping,Wu Kan
DOI: https://doi.org/10.3788/aos240533
2024-01-01
Acta Optica Sinica
Abstract:Objective With the increasing amount of information in today's world, optical signal transmission and correlation devices are becoming increasingly important. Photonic chips miniaturize and integrate various photonic devices with the advantages of low cost and low power consumption. When a photonic chip works, it must couple the optical signal between the chip and the outside fiber. The edge coupling scheme has the benefits of a large working bandwidth and low packaging difficulty, which makes batch manufacturing easy, and has promising application prospects. In the edge coupling process, the size difference between the fiber and the waveguide leads to a large mode field mismatch between them, which is the main factor of the coupling loss. The coupling structure designed on the chip to expand the spot can effectively improve mode overlap. Many schemes have been proposed and implemented on the silicon-on-insulator (SOI) platform, such as three-dimensional amplification waveguides, inverse taper designs, and subwavelength gratings. Lithium niobate is an excellent material for manufacturing optical devices that exhibits outstanding electro-optic, acousto-optic, and nonlinear properties. The lithium niobate on insulator (LNOI) platform is also an ideal solution for optoelectronic chip integration systems. The edge coupling structure of lithium niobate thin-film chips mostly adopts layered etching and an inverse taper structure to guide spot diffusion into the cladding, thereby improving the mode overlap. However, owing to the difficulty in processing lithium niobate, there is still room for improvement in this research area. To improve the efficiency and stability of the edge coupler on thin-film lithium niobate chips, this study designed and studied a double-layer multi-tip inverse taper structure based on the etching process conditions. Methods In this study, the characteristics and parameter selection schemes of double-and triple-tip inverse taper structures were explored using simulation calculations, parameter sweeping, and comparative analysis. The edge coupling process can be divided into two stages. At the end face of the chip, the light emitted from the fiber strikes the sidewall of the chip. Part of the energy is dissipated into the surrounding air owing to reflection and scattering, while the remaining light incident on the chip matches the waveguide mode. Only the qualified parts successfully enter the waveguide. After the mode-matching stage, the light coupled into the waveguide gradually changes the mode field shape with the width variation of the waveguide, and finally connects with the ordinary straight waveguide in the chip. Combined with this process, the simulation was completed using step-by-step and overall methods. First, the finite-difference eigenmode (FDE) and finite-difference time-domain (FDTD) methods were used to calculate the mode at the edge and its evolution in the transition waveguide to explore the influence of the structural size and parameter selection. Then, an overall simulation was performed to obtain performance indices, such as the working bandwidth and alignment tolerance of the structure. Results and Discussions Lithium niobate chips are often not completely etched during processing. In this study, a two-step etching scheme was introduced to perform a second etching near the edge of the chip to form a thinner waveguide structure in the lower layer. Therefore, this study adopted single-tip and multi-tip inverse taper designs and deposited a silicon oxide cladding onto the waveguide. When the optical signal is transmitted to the edge of the chip, it cannot be constrained in the narrow waveguide. Therefore, the spot diffuses into the cladding with a lower refractive index and finally achieves a higher mode overlap with the fiber. The multi-tip design can guide the expansion of the mold field at the end face, thereby reducing the requirements for machining accuracy. Subsequently, fork-shaped structures are used to guide and converge the spot. The converged light then completes the coupling of the upper and lower layers through the transition waveguide and connects to the ordinary waveguide on the chip. The simulation results for the end face showed that the mode overlap decreased rapidly with an increase in the taper tip width. The double-and three-tip designs can alleviate this decreasing trend [Fig. 2(a)]. In the face of larger incident light spots, multi-tip designs are significantly better than single-tip designs. The realization effect of the small tip is limited by the level of the manufacturing process. A higher level of manufacturing accuracy can improve the smoothness of the transition part of a structure. The overall simulation results show that under the process conditions of sidewall inclination angle of 62 degrees and minimum width of 150 nm, the ideal double-tip and three-tip structures can achieve single-end coupling loss of 0.47 dB and 1.04 dB at 1550 nm, respectively, also with large working bandwidth and alignment tolerance (Fig. 5). After determining the main parameters, the device was fabricated and tested on the x-cut thin-film lithium niobate chip. We used electron beam lithography to create mask patterns and processed a double-layer lithium niobate structure via twice etching. Finally, PECVD (Plasma enhanced chemical vapor deposition) was used to deposit silica as the upper cladding. The test results indicate that the coupling efficiency of the device is affected by the process level. Owing to the roughness of the etching surface, the tip width must be appropriately large, and the best results are achieved at 150-250 nm. The spectrum results show that the coupling loss of the three-tip structure is less affected by the wavelength. Conclusions This paper investigates the edge coupling structure of thin-film lithium niobate chips. The FDE and FDTD algorithms were used for simulation calculations. The differences in the coupling efficiencies of the single-tip, double-tip, and three-tip structures were compared. A set of feasible coupling structure designs and parameter selection strategies were proposed, and manufacturing test experiments were conducted to supplement the simulation results. The multi-tip inverse taper design can guide spot diffusion at the edge of the chip, leading to more stable performance in the face of insufficient manufacturing accuracy or a large fiber mode field. The coupling structure described in this paper can achieve a low loss and large alignment tolerance using a simple process, and the three-tip coupling structure exhibits outstanding wavelength insensitivity.