Abstract:β-Ga2O3 is an ultra-wide bandgap semiconductor (Eg~4.8 eV) of interest for many applications, including optoelectronics. Undoped Ga2O3 emits light in the UV range that can be tuned to the visible region of the spectrum by rare earth dopants. In this work, we investigate the crystal lattice recovery of (2¯01)-oriented β-Ga2O3 crystals implanted with Yb ions to the fluence of 1 ×1014 at/cm2. Post-implantation annealing at a range of temperature and different atmospheres was used to investigate the β-Ga2O3 crystal structure recovery and optical activation of Yb ions. Ion implantation is a renowned technique used for material doping, but in spite of its many advantages such as the controlled introduction of dopants in concentrations exceeding the solubility limits, it also causes damage to the crystal lattice, which strongly influences the optical response from the material. In this work, post-implantation defects in β-Ga2O3:Yb crystals, their transformation, and the recovery of the crystal lattice after thermal treatment have been investigated by channeling Rutherford backscattering spectrometry (RBS/c) supported by McChasy simulations, and the optical response was tested. It has been shown that post-implantation annealing at temperatures of 700-900 °C results in partial crystal lattice recovery, but it is accompanied by the out-diffusion of Yb ions toward the surface if the annealing temperature and time exceed 800 °C and 10 min, respectively. High-temperature implantation at 500-900 °C strongly limits post-implantation damage to the crystal lattice, but it does not cause the intense luminescence of Yb ions. This suggests that the recovery of the crystal lattice is not a sufficient condition for strong rare-earth photoluminescence at room temperature and that oxygen annealing is beneficial for intense infrared luminescence compared to other tested environments.

In Situ Study on Yb2+ Luminescence in the 293–473 K Range with Ion Beam-Induced Luminescence

In situ study on Yb 2+ luminescence in the 293–473 K range with ion beam-induced luminescence

Luminescence Properties of Yb2+ Doped NaBaPO4 Phosphate Crystals

Microstructure and Luminescence of Yb3+-doped Fluorosilicate Glass Ceramics

Investigation on the luminescence of crystal YAG:Nd3+

Crystal Lattice Recovery and Optical Activation of Yb Implanted into β-Ga2O3

The self-absorption effect on the X-ray excited luminescence and cathodoluminescence spectra of YAG: Yb crystals

Cooperative Luminescence in Yb : Yag Crystals

Photoluminescence and Thermal Stability of Β-Sialon:Re (re = Sm, Dy) Phosphors

Photoluminescence Performance of Er/Yb Co-Doped NBT Ceramics Prepared Via Hydrothermal Method

Cathodo- and radioluminescence of Tm$^{3+}$:YAG and Nd$^{3+}$:YAG in an extended wavelength range

Sensitized Yb3+ Luminescence of Eu3+/Yb3+‐Codoped Fluorosilicate Glass Ceramics

Optical Temperature Sensing Characteristics of Yb3+/Nd3+ Co-Doped YAG Single Crystal Fiber Based on Up-Conversion Luminescence

Spectroscopy and Laser Performance of Yb3+ Doped YAG Crystal

Growth and Luminescent Properties of Yb:YAG and Ca Co-Doped Yb:YAG Ultrafast Scintillation Crystals

Near infra-red luminescence thermometer based on Y3Al5O12: Yb3+, Cr4+

Fabrication And Optical Properties Of 2at.%Yb:Luyag Mixed Crystal Through Nanocrystalline Powders

Luminescent manifestations of ytterbium ions in the crystal structure of silicate apatite

Luminescence Anisotropy and Thermal Effect of Magnetic and Electric Dipole Transitions of Cr3+ Ions in Yb:YAG Transparent Ceramic.

Networking State of Ytterbium Ions Probing the Origin of Luminescence Quenching and Activation in Nanocrystals

Crystal Growth and Spectroscopy of Yb2+-Doped CsI Single Crystal