Abstract:Neuromorphic hardware facilitates rapid and energy-efficient training and operation of neural network models for artificial intelligence. However, existing analog in-memory computing devices, like memristors, continue to face significant challenges that impede their commercialization. These challenges include high variability due to their stochastic nature. Microfabricated electrochemical synapses offer a promising approach by functioning as an analog programmable resistor based on deterministic ion-insertion mechanisms. Here, we developed an all-solid-state oxide-ion synaptic transistor employing $\text{Bi}_2\text{V}_{0.9}\text{Cu}_{0.1}\text{O}_{5.35}$ as a superior oxide-ion conductor electrolyte and $\text{La}_\text{0.5}\text{Sr}_\text{0.5}\text{F}\text{O}_\text{3-$\delta$}$ as a variable resistance channel able to efficiently operate at temperatures compatible with conventional electronics. Our transistor exhibits essential synaptic behaviors such as long- and short-term potentiation, paired-pulse facilitation, and post-tetanic potentiation, mimicking fundamental properties of biological neural networks. Key criteria for efficient neuromorphic computing are satisfied, including excellent linear and symmetric synaptic plasticity, low energy consumption per programming pulse, and high endurance with minimal cycle-to-cycle variation. Integrated into an artificial neural network (ANN) simulation for handwritten digit recognition, the presented synaptic transistor achieved a 96% accuracy on the MNIST dataset, illustrating the effective implementation of our device in ANNs. These findings demonstrate the potential of oxide-ion based synaptic transistors for effective implementation in analog neuromorphic computing based on iontronics.

A Weight-Tunable Oxide Synaptic Transistor

All-metal Oxide Synaptic Transistor with Modulatable Plasticity.

Artificial Synapse Emulated Through Fully Aqueous Solution-Processed Low-Voltage In2O3 Thin-Film Transistor with Gd2O3 Solid Electrolyte.

Oxide-Based Synaptic Transistors for Neuromorphic Systems

Artificial Synapses: Photoelectric Plasticity in Oxide Thin Film Transistors with Tunable Synaptic Functions (adv. Electron. Mater. 12/2018)

Electrolyte‐Gated Synaptic Transistor with Oxygen Ions

Synaptic Metaplasticity Emulation in a Freestanding Oxide-Based Neuromorphic Transistor with Dual In-Plane Gates

Solid-State Oxide-Ion Synaptic Transistor for Neuromorphic Computing

All-solid-state Ion Doping Synaptic Transistor for Bionic Neural Computing

Photoelectric Plasticity in Oxide Thin Film Transistors with Tunable Synaptic Functions

Learning and Spatiotemporally Correlated Functions Mimicked in Oxide-Based Artificial Synaptic Transistors

Flexible transparent InZnO synapse transistor based on Li1.3Al0.3Ti0.7(PO4)3/polyvinyl pyrrolidone nanocomposites electrolyte film for neuromorphic computing

Artificial synapse based on low-voltage Ni-doped CuI thin-film transistors for neuromorphic application

Low-Voltage Synaptic Transistors Based on PrO$_{\textit{x}}$/ZrO$_{\text{2}}$ Bilayer Dielectric for Neuromorphic Computing

An Electro-Photo-sensitive Synaptic Transistor for Edge Neuromorphic Visual Systems.

Synaptic Behaviors Mimicked in Flexible Oxide-Based Transistors on Plastic Substrates

Field-driven modulating of In-Sn-O synaptic transistors with a precisely controlled weight update

Li-ion dual modulation in all-inorganic ZrLiO/InLiO aqueous solution-processed thin-film transistor for optoelectronic artificial synapse

Floating-gate Photosensitive Synaptic Transistors with Tunable Functions for Neuromorphic Computing

Synaptic Plasticity and Classical Conditioning Mimicked in Single Indium-Tungsten-oxide Based Neuromorphic Transistor

Emulating Low-Power Synaptic Plasticity in a Solution-Processed Oxide-Based Long Retention Memory Transistor with High Learning Accuracy