Abstract:Realizing increasingly complex artificial intelligence (AI) functionalities directly on edge devices calls for unprecedented energy efficiency of edge hardware. Compute-in-memory (CIM) based on resistive random-access memory (RRAM) 1 promises to meet such demand by storing AI model weights in dense, analogue and non-volatile RRAM devices, and by performing AI computation directly within RRAM, thus eliminating power-hungry data movement between separate compute and memory 2,3,4,5 . Although recent studies have demonstrated in-memory matrix-vector multiplication on fully integrated RRAM-CIM hardware 6,7,8,9,10,11,12,13,14,15,16,17 , it remains a goal for a RRAM-CIM chip to simultaneously deliver high energy efficiency, versatility to support diverse models and software-comparable accuracy. Although efficiency, versatility and accuracy are all indispensable for broad adoption of the technology, the inter-related trade-offs among them cannot be addressed by isolated improvements on any single abstraction level of the design. Here, by co-optimizing across all hierarchies of the design from algorithms and architecture to circuits and devices, we present NeuRRAM—a RRAM-based CIM chip that simultaneously delivers versatility in reconfiguring CIM cores for diverse model architectures, energy efficiency that is two-times better than previous state-of-the-art RRAM-CIM chips across various computational bit-precisions, and inference accuracy comparable to software models quantized to four-bit weights across various AI tasks, including accuracy of 99.0 percent on MNIST 18 and 85.7 percent on CIFAR-10 19 image classification, 84.7-percent accuracy on Google speech command recognition 20 , and a 70-percent reduction in image-reconstruction error on a Bayesian image-recovery task.

Multifunctional RRAM Chip with Configurability for Sparsity-Aware In-Memory ISNG Machine

A Scalable Universal Ising Machine Based on Interaction-Centric Storage and Compute-in-memory

Intelligent Computing with RRAM

An RRAM-Based Digital Computing-in-Memory Macro with Dynamic Voltage Sense Amplifier and Sparse-Aware Approximate Adder Tree

Enabling RRAM-Based Brain-Inspired Computation by Co-design of Device, Circuit, and System

A 6T-3M SOT-MRAM for In-Memory Computing with Reconfigurable Arithmetic Operations.

A 28-Nm RRAM Computing-in-Memory Macro Using Weighted Hybrid 2T1R Cell Array and Reference Subtracting Sense Amplifier for AI Edge Inference

RRAM-based Spiking Nonvolatile Computing-In-Memory Processing Engine with Precision-Configurable in Situ Nonlinear Activation

Architecture-circuit-technology Co-Optimization for Resistive Random Access Memory-Based Computation-in-memory Chips

A Seamless, Reconfigurable, and Highly Parallel In-Memory Stochastic Computing Approach With Resistive Random Access Memory Array

A Heterogeneous Microprocessor for Intermittent AI Inference Using Nonvolatile-SRAM-based Compute-In-Memory

Configurable in-memory computing architecture based on dual-port SRAM

A 28nm Hybrid 2T1R RRAM Computing-in-Memory Macro for Energy-efficient AI Edge Inference

Multifunctional Computing-in-memory SRAM Cells Based on Two-Surface-channel MoS2 Transistors

Resistive Memory‐Based In‐Memory Computing: From Device and Large‐Scale Integration System Perspectives

Design and Implementation of a Hybrid, ADC/DAC-Free, Input-Sparsity-Aware, Precision Reconfigurable RRAM Processing-in-Memory Chip

Device-Architecture Co-optimization for RRAM-based In-memory Computing.

System and Technology Co-optimization for RRAM Based Computation-in-memory Chip

A Reconfigurable 4T2R ReRAM Computing In-Memory Macro for Efficient Edge Applications

A compute-in-memory chip based on resistive random-access memory

RRAM-Based Single Device for Vector Multiplication and Multibit Storage with Ultrahigh Area Efficiency